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Title: The Vacancy-Induced Electronic Structure of the SrTiO3-δ Surface

Journal Article · · Advanced Electronic Materials

The emergence of a 2D electron gas (2DEG) on the (001) surface of oxygen-deficient strontium titanate (SrTiO3-δ) is investigated. Using in situ soft X-ray spectroscopy and effective mass modeling, a series of quantitative band dia-grams are developed to describe the evolution of near-surface and bulk car-rier concentrations, downward band bending, and Fermi level along a lateral gradient of oxygen vacancies formed on SrTiO3-δ by direct-current resistive heating under ultrahigh vacuum conditions. Electrons are accumulated over a 3 nm region near the surface, confined within a potential well with saturated 300 meV downward band bending. The relation between Fermi levels and carrier concentrations near the surface suggests the density of states near the surface is much lower than the bulk density of states, which is consistent with the quantum-confined subbands of a 2DEG. The quantitative relation-ship between the surface and bulk electronic structures developed in this work provides a guide for precise engineering of the oxygen-vacancy-induced 2DEG in SrTiO3.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); Institute for Catalysis in Energy Processes (ICEP); USDOE
Grant/Contract Number:
AC02-06CH11357; DMR-1334713; DMR-1333335; FG02-03ER15457; FG02-01ER45945; DE‐AC02‐06CH11357; DE‐FG02‐03ER15457; DE‐FG02‐01ER45945
OSTI ID:
1499278
Alternate ID(s):
OSTI ID: 1482131; OSTI ID: 1870982
Journal Information:
Advanced Electronic Materials, Vol. 5, Issue 1; ISSN 2199-160X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

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Cited By (2)

Emergent magnetic phase transitions in Fe-doped SrTiO 3−δ journal December 2019
Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric journal July 2019