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Title: Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5048220· OSTI ID:1481859
 [1];  [2];  [3];  [3];  [2];  [2];  [3];  [3];  [3];  [2];  [3]
  1. Shanghai Jiao Tong Univ., Shanghai (People'e Republic of China); Rutgers Univ., Piscataway, NJ (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
  3. Rutgers Univ., Piscataway, NJ (United States)
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Here, the electron density and physical stress at the thermally oxidized SiC/SiO2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and a novel stress determination technique. There is no evidence for residual carbon species at the SiO2/SiC. Instead, a ~1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiOx, 0.3 < x < 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a new chemical interaction model is proposed to explain the effect of the nitrogen, and a guideline, stress managing together with elemental control of the dielectric/SiC interface, is suggested to achieve high quality gate stack on SiC.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences, and Biosciences Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1481859
Journal Information:
Applied Physics Letters, Vol. 113, Issue 13; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Related Subjects

36 MATERIALS SCIENCE
SiO2
nitrogen passivation
wide band gap device