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Title: Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

Abstract

The synthesis of a Sr-based wide bandgap semiconductor via X-ray irradiation of strontium oxalate at high pressure has been demonstrated.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [1]
  1. Department of Physics and Astronomy, University of Nevada Las Vegas (UNLV), Las Vegas, USA
  2. Division of Geological and Planetary Sciences, California Institute of Technology, Pasadena, California, USA
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1481435
Grant/Contract Number:  
NA0001974; NA0002912
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Name: Journal of Materials Chemistry C Journal Volume: 6 Journal Issue: 46; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Evlyukhin, Egor, Kim, Eunja, Cifligu, Petrika, Goldberger, David, Schyck, Sarah, Harris, Blake, Torres, Sindi, Rossman, George R., and Pravica, Michael. Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions. United Kingdom: N. p., 2018. Web. doi:10.1039/C8TC04496A.
Evlyukhin, Egor, Kim, Eunja, Cifligu, Petrika, Goldberger, David, Schyck, Sarah, Harris, Blake, Torres, Sindi, Rossman, George R., & Pravica, Michael. Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions. United Kingdom. doi:10.1039/C8TC04496A.
Evlyukhin, Egor, Kim, Eunja, Cifligu, Petrika, Goldberger, David, Schyck, Sarah, Harris, Blake, Torres, Sindi, Rossman, George R., and Pravica, Michael. Thu . "Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions". United Kingdom. doi:10.1039/C8TC04496A.
@article{osti_1481435,
title = {Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions},
author = {Evlyukhin, Egor and Kim, Eunja and Cifligu, Petrika and Goldberger, David and Schyck, Sarah and Harris, Blake and Torres, Sindi and Rossman, George R. and Pravica, Michael},
abstractNote = {The synthesis of a Sr-based wide bandgap semiconductor via X-ray irradiation of strontium oxalate at high pressure has been demonstrated.},
doi = {10.1039/C8TC04496A},
journal = {Journal of Materials Chemistry C},
number = 46,
volume = 6,
place = {United Kingdom},
year = {Thu Nov 29 00:00:00 EST 2018},
month = {Thu Nov 29 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on November 2, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

Transparent Conducting Oxides for Photovoltaics
journal, March 2007

  • Fortunato, Elvira; Ginley, David; Hosono, Hideo
  • MRS Bulletin, Vol. 32, Issue 03, p. 242-247
  • DOI: 10.1557/mrs2007.29

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Projector augmented-wave method
journal, December 1994


Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Hydrostatic limits of 11 pressure transmitting media
journal, March 2009

  • Klotz, S.; Chervin, J-C.; Munsch, P.
  • Journal of Physics D: Applied Physics, Vol. 42, Issue 7, Article No. 075413
  • DOI: 10.1088/0022-3727/42/7/075413