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Title: Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation: Preprint

Abstract

In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.

Authors:
 [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1481099
Report Number(s):
NREL/CP-5K00-70819
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2018 World Conference on Photovoltaic Energy Conversion (WCPEC-7), 10-15 June 2018, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; potential-induced degradation; silicon; large-area damage; sodium; microscopy; spectrometry

Citation Formats

Xiao, Chuanxiao, Jiang, Chun Sheng, Harvey, Steven P, Liu, Jun, Moutinho, Helio R, Hacke, Peter L, Johnston, Steven, and Al-Jassim, Mowafak M. Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation: Preprint. United States: N. p., 2018. Web.
Xiao, Chuanxiao, Jiang, Chun Sheng, Harvey, Steven P, Liu, Jun, Moutinho, Helio R, Hacke, Peter L, Johnston, Steven, & Al-Jassim, Mowafak M. Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation: Preprint. United States.
Xiao, Chuanxiao, Jiang, Chun Sheng, Harvey, Steven P, Liu, Jun, Moutinho, Helio R, Hacke, Peter L, Johnston, Steven, and Al-Jassim, Mowafak M. Wed . "Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation: Preprint". United States. https://www.osti.gov/servlets/purl/1481099.
@article{osti_1481099,
title = {Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation: Preprint},
author = {Xiao, Chuanxiao and Jiang, Chun Sheng and Harvey, Steven P and Liu, Jun and Moutinho, Helio R and Hacke, Peter L and Johnston, Steven and Al-Jassim, Mowafak M},
abstractNote = {In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Conference:
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