skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic layer deposition for membrane interface engineering

Abstract

Atomic layer deposition represents a burgeoning and appealing technique for membrane interface engineering.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [2]
  1. School of Chemical Engineering and Technology, Sun Yat-Sen University, Zhuhai, China
  2. Institute for Molecular Engineering, University of Chicago, Chicago, USA, Chemical Sciences and Engineering Division
  3. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, USA
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1481029
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 44; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Yang, Hao-Cheng, Waldman, Ruben Z., Chen, Zhaowei, and Darling, Seth B. Atomic layer deposition for membrane interface engineering. United Kingdom: N. p., 2018. Web. doi:10.1039/C8NR08114J.
Yang, Hao-Cheng, Waldman, Ruben Z., Chen, Zhaowei, & Darling, Seth B. Atomic layer deposition for membrane interface engineering. United Kingdom. doi:10.1039/C8NR08114J.
Yang, Hao-Cheng, Waldman, Ruben Z., Chen, Zhaowei, and Darling, Seth B. Thu . "Atomic layer deposition for membrane interface engineering". United Kingdom. doi:10.1039/C8NR08114J.
@article{osti_1481029,
title = {Atomic layer deposition for membrane interface engineering},
author = {Yang, Hao-Cheng and Waldman, Ruben Z. and Chen, Zhaowei and Darling, Seth B.},
abstractNote = {Atomic layer deposition represents a burgeoning and appealing technique for membrane interface engineering.},
doi = {10.1039/C8NR08114J},
journal = {Nanoscale},
number = 44,
volume = 10,
place = {United Kingdom},
year = {Thu Nov 15 00:00:00 EST 2018},
month = {Thu Nov 15 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 30, 2019
Publisher's Accepted Manuscript

Save / Share:

Works referenced in this record:

Atomic layer deposition (ALD): from precursors to thin film structures
journal, April 2002


A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates
journal, May 2011

  • Peng, Qing; Tseng, Yu-Chih; Darling, Seth B.
  • ACS Nano, Vol. 5, Issue 6, p. 4600-4606
  • DOI: 10.1021/nn2003234

Atomic Layer Deposition Chemistry Recent Developments and Future Challenges
journal, November 2003

  • Leskel�, Markku; Ritala, Mikko
  • Angewandte Chemie International Edition, Vol. 42, Issue 45, p. 5548-5554
  • DOI: 10.1002/anie.200301652

Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis
journal, July 2011

  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 36, p. 17725-17729
  • DOI: 10.1021/jp205532e

Atomic Layer Deposition: An Overview
journal, January 2010

  • George, Steven M.
  • Chemical Reviews, Vol. 110, Issue 1, p. 111-131
  • DOI: 10.1021/cr900056b