Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

Jo, Wonhyuk; Landahl, Eric C.; DiChiara, Anthony D.; Walko, Donald A.; Lee, Sooheyong

doi:10.1063/1.5039582

Title: Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

Journal Article · Thu Jul 19 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5039582· OSTI ID:1480691

Jo, Wonhyuk ^[1]; Landahl, Eric C. ^[2]; DiChiara, Anthony D. ^[3]; Walko, Donald A. ^[3]; Lee, Sooheyong ^[4]

Korea Research Inst. of Standards and Science (KRISS), Daejeon (Korea, Republic of); Soongsil Univ., Seoul (Korea, Republic of). Dept. of Physics
DePaul Univ., Chicago, IL (United States). Dept. of Physics
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
Korea Research Inst. of Standards and Science (KRISS), Daejeon (Korea, Republic of); Univ. of Science and Technology (UST), Daejeon (Korea, Republic of). Dept. of Nanoscience

We show that time-resolved x-ray scattering can be applied to polycrystalline materials for the measurement of carrier diffusion. A polycrystalline indium antimonide sample is prepared by high-intensity ultrafast laser surface melting and re-solidification under vacuum to create randomly oriented grains with an average size of 13 nm. Two static diffraction rings are simultaneously observed on a gated pixel array detector. Their centroids move following lower-intensity laser excitation, and utilizing an in-situ angular calibration, the transient lattice spacing is determined with femtometer accuracy, thereby allowing the measurement of charge carrier dynamics. Compared to bulk calculations, we find that carrier diffusion slows by more than one order of magnitude. This result provides evidence for the formation of potential energy barriers at the grain boundaries and demonstrates the capability of time-resolved x-ray scattering to probe nanoscale charge transport in materials other than near-perfect crystals.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States); Korea Research Inst. of Standards and Science (KRISS), Daejeon (Korea, Republic of); DePaul Univ., Chicago, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Research Foundation of Korea (NRF)

Grant/Contract Number:: AC02-06CH11357; 2016K1A3A7A09005386

OSTI ID:: 1480691

Alternate ID(s):: OSTI ID: 1460914

Journal Information:: Applied Physics Letters, Vol. 113, Issue 3; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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36 MATERIALS SCIENCE
semiconductors
polycrystalline material
x-ray scattering
charge transport
crystal optics
optical diffraction
ultrafast lasers
potential energy barrier
crystallographic defects
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Title: Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering

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