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Title: Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Science (NA-113)
OSTI Identifier:
1480575
Report Number(s):
SAND2017-11140PE
658226
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 3rd Research Coordination Meeting (RCM) on Primary Radiation Damage Cross Sections, F44003 held October 23-25, 2017 in Vienna, Austria.
Country of Publication:
United States
Language:
English

Citation Formats

Griffin, Patrick J. Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.. United States: N. p., 2017. Web.
Griffin, Patrick J. Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.. United States.
Griffin, Patrick J. 2017. "Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.". United States. https://www.osti.gov/servlets/purl/1480575.
@article{osti_1480575,
title = {Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.},
author = {Griffin, Patrick J.},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1480575}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Oct 01 00:00:00 EDT 2017},
month = {Sun Oct 01 00:00:00 EDT 2017}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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