Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Science (NA-113)
- OSTI Identifier:
- 1480575
- Report Number(s):
- SAND2017-11140PE
658226
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the 3rd Research Coordination Meeting (RCM) on Primary Radiation Damage Cross Sections, F44003 held October 23-25, 2017 in Vienna, Austria.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Griffin, Patrick J. Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.. United States: N. p., 2017.
Web.
Griffin, Patrick J. Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.. United States.
Griffin, Patrick J. 2017.
"Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.". United States. https://www.osti.gov/servlets/purl/1480575.
@article{osti_1480575,
title = {Uncertainty Characterization of Various Radiation Metrics Used to Describe Damage in Silicon Semiconductors.},
author = {Griffin, Patrick J.},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1480575},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Oct 01 00:00:00 EDT 2017},
month = {Sun Oct 01 00:00:00 EDT 2017}
}
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