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Title: Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se 2 Solar Cells

Abstract

We report on measurements of junction location in Cu(In,Ga)Se $$_{2}$$ (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ~40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1480235
Report Number(s):
NREL/JA-5K00-70820
Journal ID: ISSN 2156-3381
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Cu(In,Ga)Se2 (CIGS); electrical potential/field; Kelvin probe force microscopy (KPFM); pn junction location; thin-film solar cell; window layer

Citation Formats

Jiang, Chun Sheng, Mansfield, Lorelle M., Glynn, Stephen, Xiao, Chuanxiao, Garris, Rebekah, Christensen, Steven T., and Al-Jassim, Mowafak M. Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells. United States: N. p., 2018. Web. doi:10.1109/JPHOTOV.2018.2874039.
Jiang, Chun Sheng, Mansfield, Lorelle M., Glynn, Stephen, Xiao, Chuanxiao, Garris, Rebekah, Christensen, Steven T., & Al-Jassim, Mowafak M. Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells. United States. doi:10.1109/JPHOTOV.2018.2874039.
Jiang, Chun Sheng, Mansfield, Lorelle M., Glynn, Stephen, Xiao, Chuanxiao, Garris, Rebekah, Christensen, Steven T., and Al-Jassim, Mowafak M. Wed . "Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells". United States. doi:10.1109/JPHOTOV.2018.2874039.
@article{osti_1480235,
title = {Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells},
author = {Jiang, Chun Sheng and Mansfield, Lorelle M. and Glynn, Stephen and Xiao, Chuanxiao and Garris, Rebekah and Christensen, Steven T. and Al-Jassim, Mowafak M.},
abstractNote = {We report on measurements of junction location in Cu(In,Ga)Se $_{2}$ (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ~40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.},
doi = {10.1109/JPHOTOV.2018.2874039},
journal = {IEEE Journal of Photovoltaics},
issn = {2156-3381},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 17, 2019
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