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Title: All SiC power module based boost converter platform for grid-tied energy storage applications

Abstract

A bidirectional isolated boost converter topology based on 3.3 kV – 6.5 kV Silicon Carbide (SiC) monolithically integrated transistor /Schottky rectifier devices is proposed for energy storage applications. The 200-800 V dc output of the battery system is interfaced with the 13.8 kV, 60 Hz, 3-phase medium voltage distribution grid using this topology. The use of SiC integrated devices will result in significant reduced losses for the overall system. The proposed topology is for 400 kVA system. The grid voltage level is scalable from 12.47 kV ac to 13.8 kV ac for flexible grid interface operation. The operational frequency and power density of modern energy storage power systems is limited by the Silicon power switches. This proposed SBIR program will demonstrate an unprecedented advances in size, efficiency and functionality of energy storage systems.

Authors:
 [1];  [1]
  1. GeneSiC Semiconductor
Publication Date:
Research Org.:
GeneSiC Semiconductor
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1479863
Report Number(s):
DOE-GENESIC-1111
DOE Contract Number:  
SC0013816
Type / Phase:
SBIR (Phase II)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION

Citation Formats

Sundaresan, Siddarth, and Singh, Ranbir. All SiC power module based boost converter platform for grid-tied energy storage applications. United States: N. p., 2018. Web.
Sundaresan, Siddarth, & Singh, Ranbir. All SiC power module based boost converter platform for grid-tied energy storage applications. United States.
Sundaresan, Siddarth, and Singh, Ranbir. Tue . "All SiC power module based boost converter platform for grid-tied energy storage applications". United States.
@article{osti_1479863,
title = {All SiC power module based boost converter platform for grid-tied energy storage applications},
author = {Sundaresan, Siddarth and Singh, Ranbir},
abstractNote = {A bidirectional isolated boost converter topology based on 3.3 kV – 6.5 kV Silicon Carbide (SiC) monolithically integrated transistor /Schottky rectifier devices is proposed for energy storage applications. The 200-800 V dc output of the battery system is interfaced with the 13.8 kV, 60 Hz, 3-phase medium voltage distribution grid using this topology. The use of SiC integrated devices will result in significant reduced losses for the overall system. The proposed topology is for 400 kVA system. The grid voltage level is scalable from 12.47 kV ac to 13.8 kV ac for flexible grid interface operation. The operational frequency and power density of modern energy storage power systems is limited by the Silicon power switches. This proposed SBIR program will demonstrate an unprecedented advances in size, efficiency and functionality of energy storage systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Technical Report:
This technical report may be released as soon as October 30, 2022
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

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