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Title: 900 V / 200 A SiC Schottky Diode Fabrication on 150 mm Substrates

Abstract

Advanced electrothermal modeling was utilized to optimize the chip geometry for a given size, the layout and interconnection of multiple SiC dies on a DBC substrate. The Schottky MPS die were fabricated with double-side solderable Ag-based metallization, which enables a significantly reduced thermal resistance. This allows the die to run at a lower junction temperature, while also increasing the surge current capability. The automotive application readiness of the 900 V/200 A Schottky diodes were thoroughly investigated in Phase II, based on the Automotive Electronics Council’s (AEC) Stress Test Qualification for Automotive Grade Discrete Semiconductors (AEC-Q101, Rev. D1) and JEDEC’s Stress-Test-Driven Qualification of Integrated Circuits (JESD47-I). 900 V/400 A automotive qualified 3-phase inverter module were demonstrated, and the automotive qualified 900 V/200 A Schottky rectifiers are ready for next level of product insertion.

Authors:
 [1];  [1]
  1. GeneSiC Semiconductor Inc.
Publication Date:
Research Org.:
GeneSiC Semiconductor Inc.
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)
Contributing Org.:
GeneSiC Semiconductor Inc.
OSTI Identifier:
1479640
Report Number(s):
DOE-GeneSiC-0013817-1
DOE Contract Number:  
SC0013817
Type / Phase:
SBIR (Phase II)
Resource Type:
Technical Report
Resource Relation:
Related Information: Datasheets of SiC Schottky Diodes developed/enabled by this program are available at http://www.genesicsemi.com/schottky-mps/
Country of Publication:
United States
Language:
English
Subject:
33 ADVANCED PROPULSION SYSTEMS; 77 NANOSCIENCE AND NANOTECHNOLOGY; 24 POWER TRANSMISSION AND DISTRIBUTION; 14 SOLAR ENERGY; Widebandgap, Silicon Carbide, Power semiconductor, Schottky, MOSFET, electric vehicle, propulsion,

Citation Formats

Sudaresan, Siddarth G, and Singh, Ranbir. 900 V / 200 A SiC Schottky Diode Fabrication on 150 mm Substrates. United States: N. p., 2018. Web.
Sudaresan, Siddarth G, & Singh, Ranbir. 900 V / 200 A SiC Schottky Diode Fabrication on 150 mm Substrates. United States.
Sudaresan, Siddarth G, and Singh, Ranbir. Tue . "900 V / 200 A SiC Schottky Diode Fabrication on 150 mm Substrates". United States.
@article{osti_1479640,
title = {900 V / 200 A SiC Schottky Diode Fabrication on 150 mm Substrates},
author = {Sudaresan, Siddarth G and Singh, Ranbir},
abstractNote = {Advanced electrothermal modeling was utilized to optimize the chip geometry for a given size, the layout and interconnection of multiple SiC dies on a DBC substrate. The Schottky MPS die were fabricated with double-side solderable Ag-based metallization, which enables a significantly reduced thermal resistance. This allows the die to run at a lower junction temperature, while also increasing the surge current capability. The automotive application readiness of the 900 V/200 A Schottky diodes were thoroughly investigated in Phase II, based on the Automotive Electronics Council’s (AEC) Stress Test Qualification for Automotive Grade Discrete Semiconductors (AEC-Q101, Rev. D1) and JEDEC’s Stress-Test-Driven Qualification of Integrated Circuits (JESD47-I). 900 V/400 A automotive qualified 3-phase inverter module were demonstrated, and the automotive qualified 900 V/200 A Schottky rectifiers are ready for next level of product insertion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Technical Report:
This technical report may be released as soon as October 30, 2022
Other availability
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