Controlling the Charge Density Wave Transition in Monolayer TiSe 2 : Substrate and Doping Effects

Kolekar, Sadhu; Bonilla, Manuel; Diaz, Horacio Coy; Hashimoto, Makato; Lu, Donghui; Batzill, Matthias

doi:10.1002/qute.201800070

Title: Controlling the Charge Density Wave Transition in Monolayer TiSe ₂ : Substrate and Doping Effects

Journal Article · Thu Oct 11 00:00:00 EDT 2018 · Advanced Quantum Technologies

DOI:https://doi.org/10.1002/qute.201800070· OSTI ID:1479529

Kolekar, Sadhu ^[1]; Bonilla, Manuel ^[1]; Diaz, Horacio Coy ^[1]; Hashimoto, Makato ^[2]; Lu, Donghui ^[2];

^[1]

Department of Physics University of South Florida Tampa FL 33620 USA
Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo Park CA 94025 USA

Abstract TiSe ₂ is an exciting material because it can be tuned between superconducting and charge density wave (CDW) transitions. In the monolayer limit, TiSe ₂ exhibits a sizable energy gap in the CDW phase that makes it a promising quantum material. It is shown that interfacing a single layer of TiSe ₂ with dissimilar van der Waals materials enables control of its properties. Using angle‐resolved photoemission spectroscopy, the energy gap opening is analyzed as a function of temperature for TiSe ₂ monolayers supported on different van der Waals substrates. A substantial increase in the CDW transition temperature of ≈45 K is observed on MoS ₂ compared to graphite (highly oriented pyrolytic graphite) substrates. This control of the CDW in monolayer TiSe ₂ is suggested to arise from varying charge screening of the unconventional CDW of TiSe ₂ by the substrate. In addition, the suppression of CDW order and a complete closing of the energy gap by electron doping of monolayer TiSe ₂ is demonstrated. Regulating the many‐body physics phenomena in monolayer TiSe ₂ lays the foundation of modifying TiSe ₂ in, for example, artificial van der Waals heterostructures and thus creates a new approach for utilizing the quantum states of TiSe ₂ in device applications.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC02‐76SF00515

OSTI ID:: 1479529

Journal Information:: Advanced Quantum Technologies, Journal Name: Advanced Quantum Technologies Vol. 1 Journal Issue: 3; ISSN 2511-9044

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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