Designing Magnetic Anisotropy through Strain Doping
- Materials Science and Technology Division Oak Ridge National Laboratory 1 Bethel Valley Rd. Oak Ridge TN 37831 USA, Institute for Physics Martin‐Luther‐University Halle‐Wittenberg Halle 06120 Germany
- Center for Nanophase Materials Science Oak Ridge National Laboratory 1 Bethel Valley Rd. Oak Ridge TN 37831 USA
- Materials Science and Technology Division Oak Ridge National Laboratory 1 Bethel Valley Rd. Oak Ridge TN 37831 USA
- Renewable Energies – Photovoltaics Laboratory National Institute for Research and Development in Electrochemistry and Condensed Matter Timisoara 300569 Romania
- SIST Shanghai Technology University Shanghai 200433 China
- Department of Physics Fudan University Shanghai 200433 China
- Center for Nanophase Materials Science Oak Ridge National Laboratory 1 Bethel Valley Rd. Oak Ridge TN 37831 USA, Materials Science and Engineering Department University of Tennessee Knoxville TN 37996 USA
Abstract The coupling between a material's lattice and its underlying spin state links structural deformation to magnetic properties; however, traditional strain engineering does not allow the continuous, post‐synthesis control of lattice symmetry needed to fully utilize this fundamental coupling in device design. Uniaxial lattice expansion induced by post‐synthesis low energy helium ion implantation is shown to provide a means of bypassing these limitations. Magnetocrystalline energy calculations can be used a priori to estimate the predictive design of a material's preferred magnetic spin orientation. The efficacy of this approach is experimentally confirmed in a spinel CoFe 2 O 4 model system where the epitaxial film's magnetic easy axis is continuously manipulated between the out‐of‐plane (oop) and in‐plane (ip) directions as lattice tetragonality moves from ip to oop with increasing strain doping. Macroscopically gradual and microscopically abrupt changes to preferential spin orientation are demonstrated by combining ion irradiation with simple beam masking and lithographic procedures. The ability to design magnetic spin orientations across multiple length scales in a single crystal wafer using only crystal symmetry considerations provides a clear path toward the rational design of spin transfer, magnetoelectric, and skyrmion‐based applications where magnetocrystalline energy must be dictated across multiple length scales.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- DE‐SC0002136; AC05-00OR22725
- OSTI ID:
- 1479517
- Alternate ID(s):
- OSTI ID: 1479521; OSTI ID: 1543217
- Journal Information:
- Advanced Science, Journal Name: Advanced Science Vol. 5 Journal Issue: 11; ISSN 2198-3844
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
Web of Science
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