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Title: Designing Magnetic Anisotropy through Strain Doping

Abstract

The coupling between a material's lattice and its underlying spin state links structural deformation to magnetic properties; however, traditional strain engineering does not allow the continuous, post-synthesis control of lattice symmetry needed to fully utilize this fundamental coupling in device design. Uniaxial lattice expansion induced by post-synthesis low energy helium ion implantation is shown to provide a means of bypassing these limitations. Magnetocrystalline energy calculations can be used a priori to estimate the predictive design of a material's preferred magnetic spin orientation. The efficacy of this approach is experimentally confirmed in a spinel CoFe 2O 4 model system where the epitaxial film's magnetic easy axis is continuously manipulated between the out-of-plane (oop) and in-plane (ip) directions as lattice tetragonality moves from ip to oop with increasing strain doping. Macroscopically gradual and microscopically abrupt changes to preferential spin orientation are demonstrated by combining ion irradiation with simple beam masking and lithographic procedures. The ability to design magnetic spin orientations across multiple length scales in a single crystal wafer using only crystal symmetry considerations provides a clear path toward the rational design of spin transfer, magnetoelectric, and skyrmion-based applications where magnetocrystalline energy must be dictated across multiple length scales.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [2];  [3];  [4];  [5]; ORCiD logo [6]; ORCiD logo [2]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Martin-Luther-Univ. (Germany)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. National Institute for Research and Development in Electrochemistry and Condensed Matter. (Romania)
  4. Shanghai Technology Univ., Shanghai (China)
  5. Fudan Univ., Shanghai (China)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1479517
Alternate Identifier(s):
OSTI ID: 1479521; OSTI ID: 1543217
Grant/Contract Number:  
AC05-00OR22725; SC0002136; 2016YFA0300701; 2016YFA0300702
Resource Type:
Journal Article: Published Article
Journal Name:
Advanced Science
Additional Journal Information:
Journal Volume: 5; Journal Issue: 11; Journal ID: ISSN 2198-3844
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Herklotz, Andreas, Gai, Zheng, Sharma, Yogesh, Huon, Amanda, Rus, Stefania F., Sun, Lu, Shen, Jian, Rack, Philip D., and Ward, Thomas Z. Designing Magnetic Anisotropy through Strain Doping. United States: N. p., 2018. Web. doi:10.1002/advs.201800356.
Herklotz, Andreas, Gai, Zheng, Sharma, Yogesh, Huon, Amanda, Rus, Stefania F., Sun, Lu, Shen, Jian, Rack, Philip D., & Ward, Thomas Z. Designing Magnetic Anisotropy through Strain Doping. United States. doi:10.1002/advs.201800356.
Herklotz, Andreas, Gai, Zheng, Sharma, Yogesh, Huon, Amanda, Rus, Stefania F., Sun, Lu, Shen, Jian, Rack, Philip D., and Ward, Thomas Z. Wed . "Designing Magnetic Anisotropy through Strain Doping". United States. doi:10.1002/advs.201800356.
@article{osti_1479517,
title = {Designing Magnetic Anisotropy through Strain Doping},
author = {Herklotz, Andreas and Gai, Zheng and Sharma, Yogesh and Huon, Amanda and Rus, Stefania F. and Sun, Lu and Shen, Jian and Rack, Philip D. and Ward, Thomas Z.},
abstractNote = {The coupling between a material's lattice and its underlying spin state links structural deformation to magnetic properties; however, traditional strain engineering does not allow the continuous, post-synthesis control of lattice symmetry needed to fully utilize this fundamental coupling in device design. Uniaxial lattice expansion induced by post-synthesis low energy helium ion implantation is shown to provide a means of bypassing these limitations. Magnetocrystalline energy calculations can be used a priori to estimate the predictive design of a material's preferred magnetic spin orientation. The efficacy of this approach is experimentally confirmed in a spinel CoFe2O4 model system where the epitaxial film's magnetic easy axis is continuously manipulated between the out-of-plane (oop) and in-plane (ip) directions as lattice tetragonality moves from ip to oop with increasing strain doping. Macroscopically gradual and microscopically abrupt changes to preferential spin orientation are demonstrated by combining ion irradiation with simple beam masking and lithographic procedures. The ability to design magnetic spin orientations across multiple length scales in a single crystal wafer using only crystal symmetry considerations provides a clear path toward the rational design of spin transfer, magnetoelectric, and skyrmion-based applications where magnetocrystalline energy must be dictated across multiple length scales.},
doi = {10.1002/advs.201800356},
journal = {Advanced Science},
issn = {2198-3844},
number = 11,
volume = 5,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1002/advs.201800356

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Implanting helium ions into a single crystal CoFe2O4 film grown epitaxially on MgO induces single-axis oop lattice expansion. A)θ–2θ XRD around the (002)pc MgO peak show that the c-axis expands with increasing He dose (offset for clarity). B) RSM around the (103)pc MgO peak for as-grown and highestmore » dosed states show that the film remains epitaxially locked to the substrate across the entire doping regime. C) Diagram illustrating change in tetragonality from negative value in as-grown film where long axes lie in the film plane to a positive value where the long axis is directed oop.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.