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Title: Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments

Abstract

Sensor Creations, Inc. (SCI) has developed a high-speed, low-power, 1024 x 1024 CMOS monolithic active pixel sensor (MAPS) for particle tracking in high-energy physics (HEP) applications. SCI’s sensor is a fully depleted, backside-illuminated sensor fabricated in high-resistivity silicon with a unique CMOS sensor process that makes it possible to integrate complementary circuitry, for example digital circuitry, inside the pixel array. With smaller pixels compared with other MAPS used in the HEP community, SCI’s sensor enables a higher position resolution. To keep the data rate at a manageable level, data are reduced early on in the readout chain through end-of-column discrimination and programmable on-chip sparsification logic, using a data reduction scheme known as the “OrthoPix” concept which is particularly well suited for large area particle tracking at high frame rates with minimum power dissipation using small pixels. SCI’s sensor is designed to achieve a reconstruction efficiency of 99.9% at 340 MHz/cm2 hit rate (equivalent to ~29 hits per frame) at 50 MHz frame rate. Fabrication is performed by conventional silicon foundries and sensors can be manufactured in large format limited only by the size of the silicon wafer substrate. The CMOS process is inherently radiation hard, and SCI’s sensor is expectedmore » to maintain full functionality even after accumulating very high neutron irradiation dosages of >1016 cm2. This report provides an overview of the OrthoPix concept and a detailed description of SCI’s sensor with OrthoPix architecture implementation. We will describe in detail our sensor design and layout, backside processing, packaging, test environment development, and test results obtained for both our pathfinder device and the OrthoPix device.« less

Authors:
;
Publication Date:
Research Org.:
Sensor Creations, Inc.
Sponsoring Org.:
USDOE Office of Science (SC)
Contributing Org.:
Sensor Creations, Inc.
OSTI Identifier:
1479199
Report Number(s):
DOE-SCI-13683
8054840444
DOE Contract Number:  
SC0013683
Type / Phase:
SBIR (Phase II)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 47 OTHER INSTRUMENTATION; Detector, Sensor, CMOS, Backside Illuminated, Fully Depleted, MAPS, Monolithic, APS, Particle Tracking

Citation Formats

Lauxtermann, Stefan Clemens, and Wong, Selmer. Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments. United States: N. p., 2018. Web.
Lauxtermann, Stefan Clemens, & Wong, Selmer. Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments. United States.
Lauxtermann, Stefan Clemens, and Wong, Selmer. Sat . "Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments". United States.
@article{osti_1479199,
title = {Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments},
author = {Lauxtermann, Stefan Clemens and Wong, Selmer},
abstractNote = {Sensor Creations, Inc. (SCI) has developed a high-speed, low-power, 1024 x 1024 CMOS monolithic active pixel sensor (MAPS) for particle tracking in high-energy physics (HEP) applications. SCI’s sensor is a fully depleted, backside-illuminated sensor fabricated in high-resistivity silicon with a unique CMOS sensor process that makes it possible to integrate complementary circuitry, for example digital circuitry, inside the pixel array. With smaller pixels compared with other MAPS used in the HEP community, SCI’s sensor enables a higher position resolution. To keep the data rate at a manageable level, data are reduced early on in the readout chain through end-of-column discrimination and programmable on-chip sparsification logic, using a data reduction scheme known as the “OrthoPix” concept which is particularly well suited for large area particle tracking at high frame rates with minimum power dissipation using small pixels. SCI’s sensor is designed to achieve a reconstruction efficiency of 99.9% at 340 MHz/cm2 hit rate (equivalent to ~29 hits per frame) at 50 MHz frame rate. Fabrication is performed by conventional silicon foundries and sensors can be manufactured in large format limited only by the size of the silicon wafer substrate. The CMOS process is inherently radiation hard, and SCI’s sensor is expected to maintain full functionality even after accumulating very high neutron irradiation dosages of >1016 cm2. This report provides an overview of the OrthoPix concept and a detailed description of SCI’s sensor with OrthoPix architecture implementation. We will describe in detail our sensor design and layout, backside processing, packaging, test environment development, and test results obtained for both our pathfinder device and the OrthoPix device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

Technical Report:
This technical report may be released as soon as October 27, 2022
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