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Title: Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2

Abstract

Carrier multiplication (CM) is an interesting fundamental phenomenon with application potential in optoelectronics and photovoltaics, and it has been shown to be promoted by quantum confinement effects in nanostructures. However, mostly due to the short lifetimes of additional electron-hole (e-h) pairs generated by CM, major improvements of quantum dot devices that exploit CM are limited. Here we investigate CM in SiO2 solid state dispersions of phosphorus and boron codoped Si nanocrystals (NCs): an exotic variant of Si NCs whose photoluminescence (PL) emission energy, the optical bandgap, is significantly red-shifted in comparison to undoped Si NCs. By combining the results obtained by ultrafast induced absorption (IA) with PL quantum yield (PL QY) measurements, we demonstrate CM with a long (around 100 us) lifetime of the additional e-h pairs created by the process, similar as previously reported for undoped Si NCs, but with a significantly lower CM threshold energy. This constitutes a significant step toward the practical implementation of Si-based NCs in optoelectronic devices: we demonstrate efficient CM at the energy bandgap optimal for photovoltaic conversion.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [3];  [3]; ORCiD logo [4]; ORCiD logo [3]
  1. Royal Institute of Technology (KTH) Kistagången 16, 164 40 Kista, Sweden
  2. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
  3. Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
  4. Department of Electrical and Electronic Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1478316
Report Number(s):
NREL/JA-5900-69086
Journal ID: ISSN 2330-4022
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 5; Journal Issue: 7; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; carrier generation rate; carrier multiplication; codoped silicon nanocrystals; photoluminescence quantum yield

Citation Formats

Chung, Nguyen Xuan, Limpens, Rens, de Weerd, Chris, Lesage, Arnon, Fujii, Minoru, and Gregorkiewicz, Tom. Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2. United States: N. p., 2017. Web. doi:10.1021/acsphotonics.8b00144.
Chung, Nguyen Xuan, Limpens, Rens, de Weerd, Chris, Lesage, Arnon, Fujii, Minoru, & Gregorkiewicz, Tom. Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2. United States. https://doi.org/10.1021/acsphotonics.8b00144
Chung, Nguyen Xuan, Limpens, Rens, de Weerd, Chris, Lesage, Arnon, Fujii, Minoru, and Gregorkiewicz, Tom. Tue . "Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2". United States. https://doi.org/10.1021/acsphotonics.8b00144.
@article{osti_1478316,
title = {Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2},
author = {Chung, Nguyen Xuan and Limpens, Rens and de Weerd, Chris and Lesage, Arnon and Fujii, Minoru and Gregorkiewicz, Tom},
abstractNote = {Carrier multiplication (CM) is an interesting fundamental phenomenon with application potential in optoelectronics and photovoltaics, and it has been shown to be promoted by quantum confinement effects in nanostructures. However, mostly due to the short lifetimes of additional electron-hole (e-h) pairs generated by CM, major improvements of quantum dot devices that exploit CM are limited. Here we investigate CM in SiO2 solid state dispersions of phosphorus and boron codoped Si nanocrystals (NCs): an exotic variant of Si NCs whose photoluminescence (PL) emission energy, the optical bandgap, is significantly red-shifted in comparison to undoped Si NCs. By combining the results obtained by ultrafast induced absorption (IA) with PL quantum yield (PL QY) measurements, we demonstrate CM with a long (around 100 us) lifetime of the additional e-h pairs created by the process, similar as previously reported for undoped Si NCs, but with a significantly lower CM threshold energy. This constitutes a significant step toward the practical implementation of Si-based NCs in optoelectronic devices: we demonstrate efficient CM at the energy bandgap optimal for photovoltaic conversion.},
doi = {10.1021/acsphotonics.8b00144},
url = {https://www.osti.gov/biblio/1478316}, journal = {ACS Photonics},
issn = {2330-4022},
number = 7,
volume = 5,
place = {United States},
year = {2017},
month = {12}
}