skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
DOE - BASIC ENERGY SCIENCESUNIVERSITY
OSTI Identifier:
1477086
Resource Type:
Journal Article
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 203; Journal Issue: 1; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Barabash, R. I., Barabash, O. M., Ice, G. E., Roder, C., Figge, S., Einfeldt, S., Hommel, D., Katona, T. M., Speck, J. S., DenBaars, S. P., and Davis, R. F. Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers. United States: N. p., 2006. Web. doi:10.1002/pssa.200563503.
Barabash, R. I., Barabash, O. M., Ice, G. E., Roder, C., Figge, S., Einfeldt, S., Hommel, D., Katona, T. M., Speck, J. S., DenBaars, S. P., & Davis, R. F. Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers. United States. doi:10.1002/pssa.200563503.
Barabash, R. I., Barabash, O. M., Ice, G. E., Roder, C., Figge, S., Einfeldt, S., Hommel, D., Katona, T. M., Speck, J. S., DenBaars, S. P., and Davis, R. F. Sun . "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers". United States. doi:10.1002/pssa.200563503.
@article{osti_1477086,
title = {Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers},
author = {Barabash, R. I. and Barabash, O. M. and Ice, G. E. and Roder, C. and Figge, S. and Einfeldt, S. and Hommel, D. and Katona, T. M. and Speck, J. S. and DenBaars, S. P. and Davis, R. F.},
abstractNote = {},
doi = {10.1002/pssa.200563503},
journal = {Physica Status Solidi. A, Applications and Materials Science},
issn = {1862-6300},
number = 1,
volume = 203,
place = {United States},
year = {2006},
month = {1}
}

Works referenced in this record:

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
journal, April 1998