Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Grivickas, P.; Geisz, J. F.; Gupta, Y. M.

doi:10.1063/1.5038723

Title: Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Journal Article · Mon Aug 13 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5038723· OSTI ID:1476912

Grivickas, P. ^[1]; Geisz, J. F. ^[2];

^[1]

Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics. Dept. of Physics
National Renewable Energy Lab. (NREL), Golden, CO (United States)

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Research Organization:: Washington State Univ., Pullman, WA (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: NA0000970; AC36-08GO28308

OSTI ID:: 1476912

Alternate ID(s):: OSTI ID: 1464316; OSTI ID: 1468524; OSTI ID: 1476907; OSTI ID: 1512622

Report Number(s):: NREL/JA-5J00-71420; LLNL-JRNL-744179

Journal Information:: Applied Physics Letters, Vol. 113, Issue 7; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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References (32)

Use of dynamic compression to probe semiconductor response at large strains Grivickas, P.; McCluskey, M. D.; Gupta, Y. M. physica status solidi (b), Vol. 250, Issue 4 https://doi.org/10.1002/pssb.201200959	journal	April 2013
Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa Grivickas, P.; McCluskey, M. D.; Gupta, Y. M. Applied Physics Letters, Vol. 95, Issue 15 https://doi.org/10.1063/1.3247886	journal	October 2009
Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures Gell, M.; Ninno, D.; Jaros, M. Physical Review B, Vol. 35, Issue 3 https://doi.org/10.1103/PhysRevB.35.1196	journal	January 1987
Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain Smith, Andrew M.; Mohs, Aaron M.; Nie, Shuming Nature Nanotechnology, Vol. 4, Issue 1 https://doi.org/10.1038/nnano.2008.360	journal	December 2008
Observation of direct and phonon-assisted indirect transitions in ${G a A s / G a}_{x} {Al}_{1 - x} As$ multiquantum wells under hydrostatic pressure Dai, N.; Huang, D.; Liu, X. Q. Physical Review B, Vol. 57, Issue 11 https://doi.org/10.1103/PhysRevB.57.6566	journal	March 1998
Effect of Pressure on the Absorption Edges of Some III-V, II-VI, and I-VII Compounds Edwards, A. L.; Drickamer, H. G. Physical Review, Vol. 122, Issue 4 https://doi.org/10.1103/PhysRev.122.1149	journal	May 1961
Laser interferometer for measuring high velocities of any reflecting surface Barker, L. M.; Hollenbach, R. E. Journal of Applied Physics, Vol. 43, Issue 11 https://doi.org/10.1063/1.1660986	journal	November 1972
Effects of compressive uniaxial stress on the electronic structure of GaAs- ${Ga}_{1 - x} {Al}_{x} As$ quantum wells Mailhiot, C.; Smith, D. L. Physical Review B, Vol. 36, Issue 5 https://doi.org/10.1103/PhysRevB.36.2942	journal	August 1987
Mixing of valence subbands in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple quantum wells by uniaxial stress Lee, Johnson; Jagannath, C.; Vassell, M. O. Physical Review B, Vol. 37, Issue 8 https://doi.org/10.1103/PhysRevB.37.4164	journal	March 1988
Million-Atom Pseudopotential Calculation of $γ$ - $X$ Mixing in $GaAs / AlAs$ Superlattices and Quantum Dots Wang, Lin-Wang; Franceschetti, Alberto; Zunger, Alex Physical Review Letters, Vol. 78, Issue 14 https://doi.org/10.1103/PhysRevLett.78.2819	journal	April 1997
Temperature dependence of exciton lifetimes in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As single quantum wells Martinez-Pastor, J.; Vinattieri, A.; Carraresi, L. Physical Review B, Vol. 47, Issue 16 https://doi.org/10.1103/PhysRevB.47.10456	journal	April 1993
On the Farsightedness (hyperopia) of the Standard k � p Model Zunger, Alex physica status solidi (a), Vol. 190, Issue 2 https://doi.org/10.1002/1521-396X(200204)190:2<467::AID-PSSA467>3.0.CO;2-4	journal	April 2002
Transformation of GaAs into an indirect $L$ -band-gap semiconductor under uniaxial strain Grivickas, P.; McCluskey, M. D.; Gupta, Y. M. Physical Review B, Vol. 80, Issue 7 https://doi.org/10.1103/PhysRevB.80.073201	journal	August 2009
Band-gap luminescence of GaP:S shock compressed to 5GPa Grivickas, P.; McCluskey, M. D.; Gupta, Y. M. Applied Physics Letters, Vol. 92, Issue 14 https://doi.org/10.1063/1.2907499	journal	April 2008
Effects of external stress on the electronic structure and optical properties of [001]- and [111]-growth-axis semiconductor superlattices Mailhiot, C.; Smith, D. L. Physical Review B, Vol. 38, Issue 8 https://doi.org/10.1103/PhysRevB.38.5520	journal	September 1988
Band parameters for III–V compound semiconductors and their alloys Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875 https://doi.org/10.1063/1.1368156	journal	June 2001
Equilibrium limits of coherency in strained nanowire heterostructures Ertekin, Elif; Greaney, P. A.; Chrzan, D. C. Journal of Applied Physics, Vol. 97, Issue 11 https://doi.org/10.1063/1.1903106	journal	June 2005
Effects of linear and nonlinear piezoelectricity on the electronic properties of $In As ∕ Ga As$ quantum dots Bester, Gabriel; Zunger, Alex; Wu, Xifan Physical Review B, Vol. 74, Issue 8 https://doi.org/10.1103/PhysRevB.74.081305	journal	August 2006
Correction to the velocity‐per‐fringe relationship for the VISAR interferometer Barker, L. M.; Schuler, K. W. Journal of Applied Physics, Vol. 45, Issue 8 https://doi.org/10.1063/1.1663841	journal	August 1974
Γ- X mixing in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As coupled double quantum wells under hydrostatic pressure Burnett, J. H.; Cheong, H. M.; Paul, W. Physical Review B, Vol. 47, Issue 4 https://doi.org/10.1103/PhysRevB.47.1991	journal	January 1993
High-pressure studies of GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells at 300 and 80 K using photoreflectance spectroscopy Kangarlu, A.; Chandrasekhar, H. R.; Chandrasekhar, M. Physical Review B, Vol. 38, Issue 14 https://doi.org/10.1103/PhysRevB.38.9790	journal	November 1988
Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures Yang, Shenyuan; Prendergast, David; Neaton, Jeffrey B. Nano Letters, Vol. 10, Issue 8 https://doi.org/10.1021/nl101999p	journal	August 2010
Uniaxial stress dependence of spatially confined excitons Jagannath, C.; Koteles, Emil S.; Lee, Johnson Physical Review B, Vol. 34, Issue 10 https://doi.org/10.1103/PhysRevB.34.7027	journal	November 1986
Free‐standing versus AlAs‐embedded GaAs quantum dots, wires, and films: The emergence of a zero‐confinement state Franceschetti, Alberto; Zunger, Alex Applied Physics Letters, Vol. 68, Issue 24 https://doi.org/10.1063/1.115791	journal	June 1996
High-pressure studies of GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As quantum wells of widths 26 to 150 A ̊ Venkateswaran, Umadevi; Chandrasekhar, Meera; Chandrasekhar, H. R. Physical Review B, Vol. 33, Issue 12 https://doi.org/10.1103/PhysRevB.33.8416	journal	June 1986
Quantum-confinement-induced Γ→ X transition in GaAs/AlGaAs quantum films, wires, and dots Franceschetti, Alberto; Zunger, Alex Physical Review B, Vol. 52, Issue 20 https://doi.org/10.1103/PhysRevB.52.14664	journal	November 1995
Quantum-size-induced electronic transitions in quantum dots: Indirect band-gap GaAs Luo, Jun-Wei; Franceschetti, Alberto; Zunger, Alex Physical Review B, Vol. 78, Issue 3 https://doi.org/10.1103/PhysRevB.78.035306	journal	July 2008
Optics of multiple quantum wells uniaxially stressed along the growth axis Etchegoin, P.; Fainstein, A.; Sirenko, A. A. Physical Review B, Vol. 53, Issue 20 https://doi.org/10.1103/PhysRevB.53.13662	journal	May 1996
Semiconductors under Uniaxial Strain Cardona, M. physica status solidi (b), Vol. 198, Issue 1 https://doi.org/10.1002/pssb.2221980103	journal	November 1996
Effect of hydrostatic pressure on GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As microstructures Lefebvre, P.; Gil, B.; Mathieu, H. Physical Review B, Vol. 35, Issue 11 https://doi.org/10.1103/PhysRevB.35.5630	journal	April 1987
Reflectance spectroscopy on GaAs- ${Ga}_{0.5}$ ${Al}_{0.5}$ As single quantum wells under in-plane uniaxial stress at liquid-helium temperature Gil, Bernard; Lefebvre, Pierre; Mathieu, Henry Physical Review B, Vol. 38, Issue 2 https://doi.org/10.1103/PhysRevB.38.1215	journal	July 1988
Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots Fu, Huaxiang; Zunger, Alex Physical Review Letters, Vol. 80, Issue 24 https://doi.org/10.1103/PhysRevLett.80.5397	journal	June 1998

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Title: Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

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