Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy
Here, the mobilities of electrons and holes determine the applicability of any semiconductor, but their individual measurement remains a major challenge. Here, we show that time-resolved terahertz spectroscopy (TRTS) can distinguish the mobilities of minority and majority charge carriers independently of the doping-type and without electrical contacts. To this end, we combine the well-established determination of the sum of electron and hole mobilities from photo-induced THz absorption spectra with mobility-dependent ambipolar modeling of TRTS transients. The method is demonstrated on a polycrystalline Cu2ZnSnSe4 thin film and reveals a minority (electron) mobility of 128 cm2/V-s and a majority (hole) carrier mobility of 7 cm2/V-s in the vertical transport direction relevant for light emitting, photovoltaic and solar water splitting devices. Additionally, the TRTS analysis yields an effective bulk carrier lifetime of 4.4 ns, a surface recombination velocity of 6 * 104 cm/s and a doping concentration of ca. 1016 cm-3, thus offering the potential for contactless screen novel optoelectronic materials.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1476709
- Report Number(s):
- NREL/JA-5K00-72460
- Journal Information:
- Scientific Reports, Vol. 8, Issue 1; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Influence of Germanium Content on the Properties of Cu 2 Zn(SnGe)Se 4 Thin Films Deposited by Sequential Thermal Evaporation Technique Studied by Photoacoustic Technique
|
journal | July 2019 |
Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
|
journal | March 2019 |
The electrical and optical properties of kesterites
|
journal | August 2019 |
Similar Records
Terahertz surface emission from Cu{sub 2}ZnSnSe{sub 4} thin film photovoltaic material excited by femtosecond laser pulses
Mg dopant in Cu{sub 2}ZnSnSe{sub 4}: An n-type former and a promoter of electrical mobility up to 120 cm{sup 2} V{sup −1} s{sup −1}