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Title: Memristive devices from ZnO nanowire bundles and meshes

Abstract

Here, we report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.

Authors:
 [1];  [2];  [3]; ORCiD logo [1];  [3];  [4];  [3];  [1]; ORCiD logo [3];  [5];  [6]
  1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Univ. of Memphis, Memphis, TN (United States). Dept. of Physics and Materials Science
  3. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
  4. Vanderbilt Univ., Nashville, TN (United States). Vanderbilt Inst. of Nanoscale Science and Engineering
  5. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
  6. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE; National Science Foundation (NSF)
Contributing Org.:
USDOE; National Science Foundation (NSF)
OSTI Identifier:
1476392
Alternate Identifier(s):
OSTI ID: 1399278
Grant/Contract Number:  
AC05-00OR22725; DMR-1207241; FG02-09ER46554; ACI-1053575
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; memristor; x-rays; metal oxides; magnetic materials; density functional theory; electric power; transistors; nanowires; first-principle calculations; semiconductor devices

Citation Formats

Puzyrev, Y. S., Shen, X., Zhang, Cher Xuan, Hachtel, Jordan A., Ni, Kai, Choi, Bo K., Zhang, Enxia -X., Ovchinnikov, Oleg S., Schrimpf, R. D., Fleetwood, D. M., and Pantelides, Sokrates T.. Memristive devices from ZnO nanowire bundles and meshes. United States: N. p., 2017. Web. doi:10.1063/1.5008265.
Puzyrev, Y. S., Shen, X., Zhang, Cher Xuan, Hachtel, Jordan A., Ni, Kai, Choi, Bo K., Zhang, Enxia -X., Ovchinnikov, Oleg S., Schrimpf, R. D., Fleetwood, D. M., & Pantelides, Sokrates T.. Memristive devices from ZnO nanowire bundles and meshes. United States. doi:10.1063/1.5008265.
Puzyrev, Y. S., Shen, X., Zhang, Cher Xuan, Hachtel, Jordan A., Ni, Kai, Choi, Bo K., Zhang, Enxia -X., Ovchinnikov, Oleg S., Schrimpf, R. D., Fleetwood, D. M., and Pantelides, Sokrates T.. Fri . "Memristive devices from ZnO nanowire bundles and meshes". United States. doi:10.1063/1.5008265. https://www.osti.gov/servlets/purl/1476392.
@article{osti_1476392,
title = {Memristive devices from ZnO nanowire bundles and meshes},
author = {Puzyrev, Y. S. and Shen, X. and Zhang, Cher Xuan and Hachtel, Jordan A. and Ni, Kai and Choi, Bo K. and Zhang, Enxia -X. and Ovchinnikov, Oleg S. and Schrimpf, R. D. and Fleetwood, D. M. and Pantelides, Sokrates T.},
abstractNote = {Here, we report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.},
doi = {10.1063/1.5008265},
journal = {Applied Physics Letters},
number = 15,
volume = 111,
place = {United States},
year = {Fri Oct 13 00:00:00 EDT 2017},
month = {Fri Oct 13 00:00:00 EDT 2017}
}

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Works referenced in this record:

Inhomogeneous Electron Gas
journal, November 1964


Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965