Interface Engineering for 25% CdTe Solar Cells

Tuerxunjiang, Abulikemu; Colegrove, Eric M.; Metzger, Wyatt K.

doi:10.1021/acsaem.8b01173

Title: Interface Engineering for 25% CdTe Solar Cells

Journal Article · Thu Sep 13 00:00:00 EDT 2018 · ACS Applied Energy Materials

DOI:https://doi.org/10.1021/acsaem.8b01173· OSTI ID:1475527

^[1];

^[1]; Metzger, Wyatt K. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Buffer layers, such as CdS and Mg_xZn_1-xO (MZO), are critical for CdTe and other thin film polycrystalline solar cells. A ternary compound, such as MZO, allows for interface engineering by adjusting composition, bandgap, and doping to manipulate barriers and recombination to enhance thin film efficiencies toward 25%. Here, theoretical studies demonstrate the enormous impact of front interface offset and emitter doping have on device performance. The results reveal it is possible to achieve 25% device efficiency with open-circuit voltage >1 V, even for 10⁵ cm/s recombination velocity, provided the interface offsets and doping are properly engineered.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1475527

Report Number(s):: NREL/JA-5K00-72328

Journal Information:: ACS Applied Energy Materials, Vol. 1, Issue 10; ISSN 2574-0962

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 58 works

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References (11)

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Cited By (1)

Recombination and bandgap engineering in CdSeTe/CdTe solar cells Zheng, X.; Kuciauskas, D.; Moseley, J. APL Materials, Vol. 7, Issue 7 https://doi.org/10.1063/1.5098459	journal	July 2019

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36 MATERIALS SCIENCE
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