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Title: A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [3];  [2]; ORCiD logo [1]
  1. QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
  2. Department of Physics and Astronomy, and Station Q Purdue,Purdue University, West Lafayette, Indiana 47907, USA
  3. Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1474208
Grant/Contract Number:  
SC0006671
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 124 Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., and Vandersypen, L. M. K. A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices. United States: N. p., 2018. Web. doi:10.1063/1.5046796.
Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., & Vandersypen, L. M. K. A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices. United States. doi:10.1063/1.5046796.
Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., and Vandersypen, L. M. K. Fri . "A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices". United States. doi:10.1063/1.5046796.
@article{osti_1474208,
title = {A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices},
author = {Hensgens, T. and Mukhopadhyay, U. and Barthelemy, P. and Vermeulen, R. F. L. and Schouten, R. N. and Fallahi, S. and Gardner, G. C. and Reichl, C. and Wegscheider, W. and Manfra, M. J. and Vandersypen, L. M. K.},
abstractNote = {},
doi = {10.1063/1.5046796},
journal = {Journal of Applied Physics},
number = 12,
volume = 124,
place = {United States},
year = {Fri Sep 28 00:00:00 EDT 2018},
month = {Fri Sep 28 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.5046796

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Works referenced in this record:

Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039

Two-Dimensional Mott-Hubbard Electrons in an Artificial Honeycomb Lattice
journal, June 2011