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Title: Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode

Abstract

Here, an electrically pumped ultraviolet random laser based on an Au-ZnO nanowire Schottky junction on top of a SiO 2/SiN x distributed Bragg reflector (DBR) has been fabricated. Electrical characterization shows typical Schottky diode current-voltage characteristics. Evident random lasing behavior is observed from electroluminescence measurement at room temperature. In comparison with a reference device having similar nanowire morphology but no DBR, this laser demonstrates almost 1.8 times reduction in threshold current and 4 times enhancement in output power. The performance enhancement originates from the incorporation of the DBR structure, which provides high reflectivity in the designed wavelength range.

Authors:
 [1]; ORCiD logo [1];  [1];  [1]
  1. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Research Org.:
Univ. of California, Riverside, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1473877
Alternate Identifier(s):
OSTI ID: 1331024
Grant/Contract Number:  
SC0012670
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; fiber-optic devices; I-V characteristics; electroluminescence; electrical characterization; metal oxides; Schottky diodes; transition metals; nanowires; lasers; excitons

Citation Formats

Bashar, Sunayna B., Suja, Mohammad, Shi, Wenhao, and Liu, Jianlin. Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode. United States: N. p., 2016. Web. doi:10.1063/1.4967177.
Bashar, Sunayna B., Suja, Mohammad, Shi, Wenhao, & Liu, Jianlin. Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode. United States. doi:10.1063/1.4967177.
Bashar, Sunayna B., Suja, Mohammad, Shi, Wenhao, and Liu, Jianlin. Mon . "Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode". United States. doi:10.1063/1.4967177. https://www.osti.gov/servlets/purl/1473877.
@article{osti_1473877,
title = {Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode},
author = {Bashar, Sunayna B. and Suja, Mohammad and Shi, Wenhao and Liu, Jianlin},
abstractNote = {Here, an electrically pumped ultraviolet random laser based on an Au-ZnO nanowire Schottky junction on top of a SiO2/SiNx distributed Bragg reflector (DBR) has been fabricated. Electrical characterization shows typical Schottky diode current-voltage characteristics. Evident random lasing behavior is observed from electroluminescence measurement at room temperature. In comparison with a reference device having similar nanowire morphology but no DBR, this laser demonstrates almost 1.8 times reduction in threshold current and 4 times enhancement in output power. The performance enhancement originates from the incorporation of the DBR structure, which provides high reflectivity in the designed wavelength range.},
doi = {10.1063/1.4967177},
journal = {Applied Physics Letters},
number = 19,
volume = 109,
place = {United States},
year = {Mon Nov 07 00:00:00 EST 2016},
month = {Mon Nov 07 00:00:00 EST 2016}
}

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Works referenced in this record:

Optically pumped lasing of ZnO at room temperature
journal, April 1997

  • Bagnall, D. M.; Chen, Y. F.; Zhu, Z.
  • Applied Physics Letters, Vol. 70, Issue 17, p. 2230-2232
  • DOI: 10.1063/1.118824