Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices
- Xi'an Jiaotong Univ., Xi'an (China)
- Tsinghua Univ., Beijing (China)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States); The Univ. of Chicago, Chicago, IL (United States)
- Simon Fraser Univ., Burnaby (Canada); Xi’an Jiaotong Univ., Xi'an (China)
A giant ME coefficient of 368 Oe V −1 at 1.5 V with good reversibility can be effectively controlled by IL gating in Fe 3 O 4 , which could be used to design tunable spintronic devices.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities; Natural Science and Engineering Research Council of Canada; USDOE
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1473683
- Alternate ID(s):
- OSTI ID: 1464662
- Journal Information:
- Materials Horizons, Vol. 5, Issue 5; ISSN 2051-6347
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 20 works
Citation information provided by
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