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Title: Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET

Abstract

The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short channel is characterized in this paper. The platform consisting of a phase-leg configuration, which can test both hard switching fault (HSF) and fault under load (FUL) types of fault, is introduced in detail. A Si IGBT based solid state circuit breaker is developed for short circuit test. The short circuit protection having a response time of 1.5 μs is validated by the test platform. The short circuit characteristics for both the HSF and FUL types at 6 kV DC-link are presented and analyzed.

Authors:
 [1];  [2];  [3];  [3];  [2]; ORCiD logo [4];  [4]
  1. The University of Tennessee, Knoxville
  2. Danfoss Drives
  3. The University of Tennessee Knoxville
  4. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1471853
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: IEEE Applied Power Electronics Conference and Exposition - San Antonio, Texas, United States of America - 3/4/2018 5:00:00 AM-3/8/2018 5:00:00 AM
Country of Publication:
United States
Language:
English

Citation Formats

Ji, Shiqi, Laitinen, Marko, Huang, Xingxuan, Sun, Jingjing, Giewont, Bill, Tolbert, Leon M., and Wang, Fei. Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET. United States: N. p., 2018. Web.
Ji, Shiqi, Laitinen, Marko, Huang, Xingxuan, Sun, Jingjing, Giewont, Bill, Tolbert, Leon M., & Wang, Fei. Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET. United States.
Ji, Shiqi, Laitinen, Marko, Huang, Xingxuan, Sun, Jingjing, Giewont, Bill, Tolbert, Leon M., and Wang, Fei. Thu . "Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET". United States. https://www.osti.gov/servlets/purl/1471853.
@article{osti_1471853,
title = {Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET},
author = {Ji, Shiqi and Laitinen, Marko and Huang, Xingxuan and Sun, Jingjing and Giewont, Bill and Tolbert, Leon M. and Wang, Fei},
abstractNote = {The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short channel is characterized in this paper. The platform consisting of a phase-leg configuration, which can test both hard switching fault (HSF) and fault under load (FUL) types of fault, is introduced in detail. A Si IGBT based solid state circuit breaker is developed for short circuit test. The short circuit protection having a response time of 1.5 μs is validated by the test platform. The short circuit characteristics for both the HSF and FUL types at 6 kV DC-link are presented and analyzed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Conference:
Other availability
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