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Title: Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor

Authors:
 [1];  [1];  [2];  [1]
  1. Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
  2. Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1471765
Grant/Contract Number:  
FG02-01ER45927
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Yang, Junjie, Wegner, Aaron, Brown, Craig M., and Louca, Despina. Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor. United States: N. p., 2018. Web. doi:10.1063/1.5040364.
Yang, Junjie, Wegner, Aaron, Brown, Craig M., & Louca, Despina. Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor. United States. doi:10.1063/1.5040364.
Yang, Junjie, Wegner, Aaron, Brown, Craig M., and Louca, Despina. Mon . "Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor". United States. doi:10.1063/1.5040364.
@article{osti_1471765,
title = {Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor},
author = {Yang, Junjie and Wegner, Aaron and Brown, Craig M. and Louca, Despina},
abstractNote = {},
doi = {10.1063/1.5040364},
journal = {Applied Physics Letters},
number = 12,
volume = 113,
place = {United States},
year = {Mon Sep 17 00:00:00 EDT 2018},
month = {Mon Sep 17 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 20, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

  • Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.
  • Science, Vol. 294, Issue 5546, p. 1488-1495
  • DOI: 10.1126/science.1065389