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Title: Persistent Charge-Density-Wave Order in Single-Layer TaSe 2

Abstract

Understanding the collective electronic phases of two-dimensional (2D) materials requires a comprehensive investigation of the relation between lattice symmetry and electronic structure1-3. Single layers of transition metal dichalcogenides (TMDs) provide a material platform to study collective states such as charge density wave (CDW) and superconductivity4-7. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and density functional theory (DFT) calculations, we present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy (MBE). We demonstrate that 3×3 CDW order persists despite distinct changes in the low energy electronic structure highlighted by a reduction in the number of bands crossing the Fermi energy (EF) and corresponding modification of Fermi surface (FS) topology. Enhanced spin orbit coupling and lattice distortion in the single-layer limit play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the 2D limit.

Authors:
ORCiD logo [1];  [2];  [3];  [2];  [4];  [5];  [2];  [2];  [6];  [2];  [7]; ORCiD logo [5];  [8];  [9];  [3];  [10]; ORCiD logo [11]; ORCiD logo [5]
  1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States; Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea
  2. Department of Physics, University of California, Berkeley, California 94720, United States
  3. Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
  4. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
  5. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
  6. Department of Physics, University of California, Berkeley, California 94720, United States; Henan Key Laboratory of Photovoltaic Materials and Laboratory of Low-dimensional Materials Science, Henan University, Kaifeng 475004, People’s Republic of China
  7. Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea; Department of Chemistry and Division of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
  8. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States; Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, United States
  9. Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea; Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
  10. Department of Physics, Pusan National University, Busan 46241, Korea
  11. Department of Physics, University of California, Berkeley, California 94720, United States; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States; Kavli Energy Nano Sciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source; SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1471522
Alternate Identifier(s):
OSTI ID: 1471447; OSTI ID: 1530339
Grant/Contract Number:  
AC02-76SF00515; 2015R1A2A1A15053564; 2016K1A4A4A01922028; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS; 2D materials; ARPES; CDW; charge density wave; MBE; STM; TaSe2; Transition metal dichalcogenides

Citation Formats

Ryu, Hyejin, Chen, Yi, Kim, Heejung, Tsai, Hsin-Zon, Tang, Shujie, Jiang, Juan, Liou, Franklin, Kahn, Salman, Jia, Caihong, Omrani, Arash A., Shim, Ji Hoon, Hussain, Zahid, Shen, Zhi-Xun, Kim, Kyoo, Min, Byung Il, Hwang, Choongyu, Crommie, Michael F., and Mo, Sung-Kwan. Persistent Charge-Density-Wave Order in Single-Layer TaSe 2. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.7b03264.
Ryu, Hyejin, Chen, Yi, Kim, Heejung, Tsai, Hsin-Zon, Tang, Shujie, Jiang, Juan, Liou, Franklin, Kahn, Salman, Jia, Caihong, Omrani, Arash A., Shim, Ji Hoon, Hussain, Zahid, Shen, Zhi-Xun, Kim, Kyoo, Min, Byung Il, Hwang, Choongyu, Crommie, Michael F., & Mo, Sung-Kwan. Persistent Charge-Density-Wave Order in Single-Layer TaSe 2. United States. doi:10.1021/acs.nanolett.7b03264.
Ryu, Hyejin, Chen, Yi, Kim, Heejung, Tsai, Hsin-Zon, Tang, Shujie, Jiang, Juan, Liou, Franklin, Kahn, Salman, Jia, Caihong, Omrani, Arash A., Shim, Ji Hoon, Hussain, Zahid, Shen, Zhi-Xun, Kim, Kyoo, Min, Byung Il, Hwang, Choongyu, Crommie, Michael F., and Mo, Sung-Kwan. Mon . "Persistent Charge-Density-Wave Order in Single-Layer TaSe 2". United States. doi:10.1021/acs.nanolett.7b03264. https://www.osti.gov/servlets/purl/1471522.
@article{osti_1471522,
title = {Persistent Charge-Density-Wave Order in Single-Layer TaSe 2},
author = {Ryu, Hyejin and Chen, Yi and Kim, Heejung and Tsai, Hsin-Zon and Tang, Shujie and Jiang, Juan and Liou, Franklin and Kahn, Salman and Jia, Caihong and Omrani, Arash A. and Shim, Ji Hoon and Hussain, Zahid and Shen, Zhi-Xun and Kim, Kyoo and Min, Byung Il and Hwang, Choongyu and Crommie, Michael F. and Mo, Sung-Kwan},
abstractNote = {Understanding the collective electronic phases of two-dimensional (2D) materials requires a comprehensive investigation of the relation between lattice symmetry and electronic structure1-3. Single layers of transition metal dichalcogenides (TMDs) provide a material platform to study collective states such as charge density wave (CDW) and superconductivity4-7. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and density functional theory (DFT) calculations, we present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy (MBE). We demonstrate that 3×3 CDW order persists despite distinct changes in the low energy electronic structure highlighted by a reduction in the number of bands crossing the Fermi energy (EF) and corresponding modification of Fermi surface (FS) topology. Enhanced spin orbit coupling and lattice distortion in the single-layer limit play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the 2D limit.},
doi = {10.1021/acs.nanolett.7b03264},
journal = {Nano Letters},
issn = {1530-6984},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {1}
}

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Figures / Tables:

Figure 1. Figure 1.: Growth of epitaxial single-layer 1H-TaSe2 film. (a) Crystal structure 1H-TaSe2 single-layer film on bilayer graphene 6H-SiC(0001) from top view and (b) side view. (c) RHEED pattern of epitaxial bilayer graphene on 6H-SiC(0001) substrate and (d) 0.9 monolayer (ML, 0.9 ML means that 90% area of the substrate surfacemore » was covered by single-layer TaSe2) 1H-TaSe2 film. (e) LEED pattern of 0.9 ML 1H-TaSe2 film. (f) Core-level spectra of 1H-TaSe2 single-layer taken at 15 K with 80 eV photon energy. (g) Large-scale STM image of 0.9 ML 1H-TaSe2/BLG (Vb = 1 V, It = 1 pA, T = 5 K). (h) Atomically resolved STM image of single-layer 1H-TaSe2 shows 3 x 3 CDW order (Vb = 50 mV, It = 180 pA, T = 5K).« less

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