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Title: Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting

Abstract

The combination of earth-abundant catalysts and semiconductors, for example, molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale conversion of solar energy to hydrogen. The inferior interface between molybdenum sulfides and planar silicon, however, severely suppresses charge carrier extraction, thus limiting the performance. In this work, we demonstrate that defect-free gallium nitride nanowire is ideally used as a linker of planar silicon and molybdenum sulfides to produce a high-quality shell-core heterostructure. Theoretical calculations revealed that the unique electronic interaction and the excellent geometric-matching structure between gallium nitride and molybdenum sulfides enabled an ideal electron-migration channel for high charge carrier extraction efficiency, leading to outstanding performance. A benchmarking current density of 40 ± 1 mA cm -2 at 0 V vs. reversible hydrogen electrode, the highest value ever reported for a planar silicon electrode without noble metals, and a large onset potential of +0.4 V were achieved under standard one-sun illumination.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [2]
  1. McGill Univ., Montreal, QC (Canada)
  2. McGill Univ., Montreal, QC (Canada); Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Fuel Cell Technologies Office (EE-3F)
OSTI Identifier:
1471151
Alternate Identifier(s):
OSTI ID: 1513254
Grant/Contract Number:  
EE0008086
Resource Type:
Journal Article: Published Article
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English

Citation Formats

Zhou, Baowen, Kong, Xianghua, Vanka, Srinivas, Chu, Sheng, Ghamari, Pegah, Wang, Yichen, Pant, Nick, Shih, Ishiang, Guo, Hong, and Mi, Zetian. Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting. United States: N. p., 2018. Web. doi:10.1038/s41467-018-06140-1.
Zhou, Baowen, Kong, Xianghua, Vanka, Srinivas, Chu, Sheng, Ghamari, Pegah, Wang, Yichen, Pant, Nick, Shih, Ishiang, Guo, Hong, & Mi, Zetian. Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting. United States. doi:10.1038/s41467-018-06140-1.
Zhou, Baowen, Kong, Xianghua, Vanka, Srinivas, Chu, Sheng, Ghamari, Pegah, Wang, Yichen, Pant, Nick, Shih, Ishiang, Guo, Hong, and Mi, Zetian. Fri . "Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting". United States. doi:10.1038/s41467-018-06140-1.
@article{osti_1471151,
title = {Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting},
author = {Zhou, Baowen and Kong, Xianghua and Vanka, Srinivas and Chu, Sheng and Ghamari, Pegah and Wang, Yichen and Pant, Nick and Shih, Ishiang and Guo, Hong and Mi, Zetian},
abstractNote = {The combination of earth-abundant catalysts and semiconductors, for example, molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale conversion of solar energy to hydrogen. The inferior interface between molybdenum sulfides and planar silicon, however, severely suppresses charge carrier extraction, thus limiting the performance. In this work, we demonstrate that defect-free gallium nitride nanowire is ideally used as a linker of planar silicon and molybdenum sulfides to produce a high-quality shell-core heterostructure. Theoretical calculations revealed that the unique electronic interaction and the excellent geometric-matching structure between gallium nitride and molybdenum sulfides enabled an ideal electron-migration channel for high charge carrier extraction efficiency, leading to outstanding performance. A benchmarking current density of 40 ± 1 mA cm-2 at 0 V vs. reversible hydrogen electrode, the highest value ever reported for a planar silicon electrode without noble metals, and a large onset potential of +0.4 V were achieved under standard one-sun illumination.},
doi = {10.1038/s41467-018-06140-1},
journal = {Nature Communications},
issn = {2041-1723},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1038/s41467-018-06140-1

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Figures / Tables:

Fig. 1 Fig. 1 : Calculated atomic structures. Top and side view of the fully relaxed atomic structures of a GaN (10 10)-wurtzite and b MoS2. c Top view of the fully relaxed atomic structures of MoS2/GaN (10$\overline1$0) vertical

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Works referenced in this record:

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.