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Title: On the origin and behavior of irradiation-induced c-component dislocation loops in magnesium

Abstract

C-component dislocation loops are one of the unique defects in hexagonal close-packed (hcp) crystals that promote the accelerated growth and void formation under irradiation. In this paper, we report in situ observation of c-component dislocation loop formation in Mg under electron irradiation with emphasis on their atomic structures. Aberration-corrected scanning transmission electron microscopy imaging is utilized to reveal four possible types of double-layer loops, which were identified as different types of stacking fault and dislocation core structures. Triple- and quadruple-layer c-component dislocation loops were also observed. The formation mechanisms of the four types of double-layer loops were revealed via molecular dynamics simulations. The experimentally observed formation rate of the single- and double-layer dislocation loops is controlled by their formation energies. Finally, our direct experimental observations in combination with molecular dynamics simulations provide fundamental insight into the mechanisms governing nucleation and growth of the c-component dislocation loops as well as their interactions, which could potentially help with future development of irradiation-resistant materials.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [1];  [1];  [4]; ORCiD logo [1]
  1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
  2. Idaho National Lab. (INL), Idaho Falls, ID (United States). Fuels Modeling and Simulations
  3. Univ. of California, Riverside, CA (United States). Dept. of Mechanical Engineering
  4. Univ. of California, Irvine, CA (United States). Dept. of Chemical Engineering and Materials Science
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States); North Carolina State Univ., Raleigh, NC (United States); Univ. of California, Irvine, CA (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); INL Laboratory Directed Research and Development (LDRD) Program; US Army Research Office (ARO); National Science Foundation (NSF)
OSTI Identifier:
1471049
Alternate Identifier(s):
OSTI ID: 1398629
Report Number(s):
INL/JOU-17-40900-Rev000
Journal ID: ISSN 1359-6454
Grant/Contract Number:  
AC07-05ID14517; NE0000538; W911NF-12-1-0009; CMMI-1631873; ECCS-1542015; 00042959-00032
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 131; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; in situ transmission electron microscopy; c-component dislocation loop; atomic structure; magnesium; stacking faults

Citation Formats

Xu, Weizong, Zhang, Yongfeng, Cheng, Guangming, Mathaudhu, Suveen N., Scattergood, Ronald O., Koch, Carl C., Lavernia, Enrique J., and Zhu, Yuntian. On the origin and behavior of irradiation-induced c-component dislocation loops in magnesium. United States: N. p., 2017. Web. doi:10.1016/j.actamat.2017.04.015.
Xu, Weizong, Zhang, Yongfeng, Cheng, Guangming, Mathaudhu, Suveen N., Scattergood, Ronald O., Koch, Carl C., Lavernia, Enrique J., & Zhu, Yuntian. On the origin and behavior of irradiation-induced c-component dislocation loops in magnesium. United States. doi:10.1016/j.actamat.2017.04.015.
Xu, Weizong, Zhang, Yongfeng, Cheng, Guangming, Mathaudhu, Suveen N., Scattergood, Ronald O., Koch, Carl C., Lavernia, Enrique J., and Zhu, Yuntian. Tue . "On the origin and behavior of irradiation-induced c-component dislocation loops in magnesium". United States. doi:10.1016/j.actamat.2017.04.015. https://www.osti.gov/servlets/purl/1471049.
@article{osti_1471049,
title = {On the origin and behavior of irradiation-induced c-component dislocation loops in magnesium},
author = {Xu, Weizong and Zhang, Yongfeng and Cheng, Guangming and Mathaudhu, Suveen N. and Scattergood, Ronald O. and Koch, Carl C. and Lavernia, Enrique J. and Zhu, Yuntian},
abstractNote = {C-component dislocation loops are one of the unique defects in hexagonal close-packed (hcp) crystals that promote the accelerated growth and void formation under irradiation. In this paper, we report in situ observation of c-component dislocation loop formation in Mg under electron irradiation with emphasis on their atomic structures. Aberration-corrected scanning transmission electron microscopy imaging is utilized to reveal four possible types of double-layer loops, which were identified as different types of stacking fault and dislocation core structures. Triple- and quadruple-layer c-component dislocation loops were also observed. The formation mechanisms of the four types of double-layer loops were revealed via molecular dynamics simulations. The experimentally observed formation rate of the single- and double-layer dislocation loops is controlled by their formation energies. Finally, our direct experimental observations in combination with molecular dynamics simulations provide fundamental insight into the mechanisms governing nucleation and growth of the c-component dislocation loops as well as their interactions, which could potentially help with future development of irradiation-resistant materials.},
doi = {10.1016/j.actamat.2017.04.015},
journal = {Acta Materialia},
number = ,
volume = 131,
place = {United States},
year = {Tue Apr 11 00:00:00 EDT 2017},
month = {Tue Apr 11 00:00:00 EDT 2017}
}

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