Fabrication of a lateral p-i-n photodiode in a Si/(Si{sub 0.8}Ge{sub 0.2}/Si) superlattice/Si/sapphire structure
- R&D Headquarters, Osaka (Japan)
- ULSI Research Center, Gifu (Japan); and others
We have fabricated the first silicon on insulator (SOI)-type lateral pin photodiode in a Si{sub 0.8}Ge{sub 0.2}/Si superlattice layer grown by molecular-beam epitaxy on a sapphire substrate. The superlattice structure is maintained even after processing at a maximum temperature of 850 {degrees}C, and the lateral pin photodiode fabricated in the Si{sub 0.8}Ge{sub 0.2}/Si superlattice layer generated about five times as much photocurrent in the 400-1000-nm wavelength range as that in a lateral pin photodiode fabricated in a Si layer of the same film thickness. It is therefore concluded that the lateral pin photodiode in the Si{sub 0.8}Ge{sub 0.2}/Si superlattice layer holds tremendous promise as a thin-film photosensor offering high sensitivity throughout the visible spectrum. 6 refs., 6 figs.
- OSTI ID:
- 147084
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0093
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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