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Title: Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Abstract

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a smallmore » magnetic field and read out in real time with anisotropic magnetoresistance measurements.« less

Authors:
 [1];  [2];  [3];  [4]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Harvard Univ., Cambridge, MA (United States). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Rochester, NY (United States). Dept. of Electrical and Computer Engineering
  3. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). NIST Center for Neutron Research
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1470770
Alternate Identifier(s):
OSTI ID: 1435004
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; antiferromagnetism; magnetic phase transitions; spintronics; devices; manganites; noncollinear magnets; superlattices

Citation Formats

Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., and Bhattacharya, Anand. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.044041.
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., & Bhattacharya, Anand. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design. United States. doi:10.1103/PhysRevApplied.9.044041.
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., and Bhattacharya, Anand. Fri . "Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design". United States. doi:10.1103/PhysRevApplied.9.044041.
@article{osti_1470770,
title = {Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design},
author = {Hoffman, Jason D. and Wu, Stephen M. and Kirby, Brian J. and Bhattacharya, Anand},
abstractNote = {Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.},
doi = {10.1103/PhysRevApplied.9.044041},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {Fri Apr 27 00:00:00 EDT 2018},
month = {Fri Apr 27 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
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