Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Arab, Shermin; Yao, Maoqing; Zhou, Chongwu; Daniel Dapkus, P.; Cronin, Stephen B.

doi:10.1063/1.4947504

Title: Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Journal Article · Fri May 06 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4947504· OSTI ID:1470769

Arab, Shermin ^[1]; Yao, Maoqing ^[1]; Zhou, Chongwu ^[2]; Daniel Dapkus, P. ^[3]; Cronin, Stephen B. ^[2]

Univ. of Southern California, Los Angeles, CA (United States). Center for Energy Nanoscience and Dept. of Electrical Engineering
Univ. of Southern California, Los Angeles, CA (United States). Center for Energy Nanoscience, Dept. of Chemical Engineering and Materials Science and Dept. of Electrical Engineering
Univ. of Southern California, Los Angeles, CA (United States). Center for Energy Nanoscience, Dept. of Chemical Engineering and Materials Science, Dept. of Physics and Dept. of Electrical Engineering

In this work, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the metal organic chemical vapor deposition method, are measured at 4K and 77 K. Our measurements indicate that an increase in carrier concentration leads to an increase in the complexity of the doping mechanism, which we attribute to the formation of different recombination centers. At high carrier concentrations, we observe a blueshift of the effective band gap energies by up to 25 meV due to the Burstein-Moss shift. Based on the full width at half maximum (FWHM) of the photoluminescence peaks, we estimate the carrier concentrations for these nanowires, which varies from 6 x 10¹⁷ cm^-3 (lightly doped), to 1.5 x 10¹⁸ cm^-3 (moderately doped), to 3.5 x 10¹⁸ cm^-3 (heavily doped) as the partial pressure of the disilane is varied from 0.01 sccm to 1 sccm during the growth process. We find that the growth temperature variation does not affect the radiative recombination mechanism; however, it does lead to a slight enhancement in the optical emission intensities. For GaAs nanowire arrays measured at room temperature, we observe the same general dependence of band gap, FWHM, and carrier concentration on doping.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN); Univ. of Southern California, Los Angeles, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001013

OSTI ID:: 1470769

Alternate ID(s):: OSTI ID: 1251438

Journal Information:: Applied Physics Letters, Vol. 108, Issue 18; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 39 works

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77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
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Title: Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

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