Cryogenic and high temperature operation of Al{sub 0.52}In{sub 0.48}P/In{sub 0.2}Ga{sup 0.8}As high electron mobility transistors

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586903· OSTI ID:147058

Kuo, J M ^[1]; Chan, Y J ^[2]

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1. AT & T Bell Lab., Murray Hill, NJ (United States)
2. National Central Univ., Chung-Li (Taiwan, Province of China)

The cryogenic and high temperature characterization of Al{sub 0.52}In{sub 0.48}P/In{sub 0.2}Ga{sub 0.8}As high electron mobility transistors (HEMTs) with 1 {mu}m-long gates, grown by gas-source molecular-beam epitaxy is being reported. Bias-stress measurements at 77 K in the dark showed only 18 mV threshold voltage shift, confirming that trapping effects are negligible in this material system. Successful operation of these HEMTs at temperatures up to 300 {degrees}C has been achieved. These results suggest that AlInP/InGaAs HEMTs have potential for cryogenic and high temperature applications. 9 refs., 4 figs., 1 tab.

• OSTI ID: 147058
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0066
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM PHOSPHIDES
PHYSICAL PROPERTIES
INDIUM PHOSPHIDES
INDIUM ARSENIDES
GALLIUM ARSENIDES
ELECTRON MOBILITY
MOLECULAR BEAM EPITAXY
TRANSISTORS
ELECTRIC CONDUCTIVITY
TEMPERATURE DEPENDENCE