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Title: The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb

Abstract

Herein, Sn was successfully doped into the Sb site of n-type NbCoSb half-Heusler compounds to tune the carrier concentration, and a maximumZTvalue of ~0.56 was obtained at 973 K for NbCoSb 1-xSn xwithx= 0.2, an increase of ~40% as compared to that of NbCoSb.

Authors:
ORCiD logo [1];  [1];  [2];  [3];  [4];  [1]; ORCiD logo [5]; ORCiD logo [4]
  1. Key Laboratory of Fluid and Power Machinery of Ministry of Education; Center for Advanced Materials and Energy; Xihua University; Chengdu 610039; China
  2. Institute of Physics; Chinese Academy of Sciences; Beijing 100080; China
  3. Institute for Metallic Materials; IFW-Dresden; Dresden; Germany
  4. Department of Physics and TcSUH; University of Houston; Houston; USA
  5. Clean Energy Materials and Engineering Center; School of Microelectronics and Solid-State Electronics; State Key Laboratory of Electronic Thin Film and Integrated Device; University of Electronic Science and Technology of China; Chengdu 610054
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1470529
DOE Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Journal Name:
Physical Chemistry Chemical Physics. PCCP (Print)
Additional Journal Information:
Journal Volume: 19; Journal Issue: 37; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 1463-9076
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Huang, Lihong, Zhang, Qinyong, Wang, Yumei, He, Ran, Shuai, Jing, Zhang, Jianjun, Wang, Chao, and Ren, Zhifeng. The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb. United States: N. p., 2017. Web. doi:10.1039/C7CP04801G.
Huang, Lihong, Zhang, Qinyong, Wang, Yumei, He, Ran, Shuai, Jing, Zhang, Jianjun, Wang, Chao, & Ren, Zhifeng. The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb. United States. doi:10.1039/C7CP04801G.
Huang, Lihong, Zhang, Qinyong, Wang, Yumei, He, Ran, Shuai, Jing, Zhang, Jianjun, Wang, Chao, and Ren, Zhifeng. Sun . "The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb". United States. doi:10.1039/C7CP04801G.
@article{osti_1470529,
title = {The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb},
author = {Huang, Lihong and Zhang, Qinyong and Wang, Yumei and He, Ran and Shuai, Jing and Zhang, Jianjun and Wang, Chao and Ren, Zhifeng},
abstractNote = {Herein, Sn was successfully doped into the Sb site of n-type NbCoSb half-Heusler compounds to tune the carrier concentration, and a maximumZTvalue of ~0.56 was obtained at 973 K for NbCoSb1-xSnxwithx= 0.2, an increase of ~40% as compared to that of NbCoSb.},
doi = {10.1039/C7CP04801G},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
issn = {1463-9076},
number = 37,
volume = 19,
place = {United States},
year = {2017},
month = {1}
}

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