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Title: Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS2

Journal Article · · Physical Review B
 [1];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Here, we show that deep trapped “dark” exciton states are responsible for the surprisingly long lifetime of band-edge photoluminescence in acid-treated single-layer MoS2. Temperature-dependent transient photoluminescence spectroscopy reveals an exponential tail of long-lived states extending hundreds of meV into the band gap. These subband states, which are characterized by a 4 μs radiative lifetime, quickly capture and store photogenerated excitons before subsequent thermalization up to the band edge where fast radiative recombination occurs. By intentionally saturating these trap states, we are able to measure the “true” 150 ps radiative lifetime of the band-edge exciton at 77 K, which extrapolates to ~ 600 ps at room temperature. These experiments reveal the dominant role of dark exciton states in acid-treated MoS2, and suggest that excitons spend >95 % of their lifetime at room temperature in trap states below the band edge. In this work, we hypothesize that these states are associated with native structural defects, which are not introduced by the superacid treatment; rather, the superacid treatment dramatically reduces nonradiative recombination through these states, extending the exciton lifetime and increasing the likelihood of eventual radiative recombination.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
SC0001088; 1122374
OSTI ID:
1470496
Alternate ID(s):
OSTI ID: 1390364
Journal Information:
Physical Review B, Vol. 96, Issue 12; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 49 works
Citation information provided by
Web of Science

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Excitons and Trions in One-Photon- and Two-Photon-Excited MoS 2 : A Study in Dispersions journal February 2018
Semiconductor Quantum Dots: An Emerging Candidate for CO 2 Photoreduction journal June 2019
Preserving the Emission Lifetime and Efficiency of a Monolayer Semiconductor upon Transfer journal April 2019
Dynamics of Free and Localized Excitons in Two‐Dimensional Transition Metal Dichalcogenides journal February 2019
Engineering fluorescence intensity and electron concentration of monolayer MoS 2 by forming heterostructures with semiconductor dots journal January 2019
Epitaxial GaAs/AlGaAs core–multishell nanowires with enhanced photoluminescence lifetime journal January 2019
Interface charge-transfer induced intralayer excited-state biexcitons in graphene/WS 2 van der Waals heterostructures journal January 2019
Gate-Voltage Control of Quantum Yield in Monolayer Transition-Metal Dichalcogenide journal January 2020
Optical generation of high carrier densities in 2D semiconductor heterobilayers journal September 2019