skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS 2

Authors:
; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1470496
DOE Contract Number:  
SC0001088
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 12; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, photosynthesis (natural and artificial), charge transport, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Goodman, A. J., Willard, A. P., and Tisdale, W. A. Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS2. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.121404.
Goodman, A. J., Willard, A. P., & Tisdale, W. A. Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS2. United States. doi:10.1103/PhysRevB.96.121404.
Goodman, A. J., Willard, A. P., and Tisdale, W. A. Fri . "Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS2". United States. doi:10.1103/PhysRevB.96.121404.
@article{osti_1470496,
title = {Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS2},
author = {Goodman, A. J. and Willard, A. P. and Tisdale, W. A.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.121404},
journal = {Physical Review B},
issn = {2469-9950},
number = 12,
volume = 96,
place = {United States},
year = {2017},
month = {9}
}

Works referenced in this record:

Well separated trion and neutral excitons on superacid treated MoS 2 monolayers
journal, June 2016

  • Cadiz, Fabian; Tricard, Simon; Gay, Maxime
  • Applied Physics Letters, Vol. 108, Issue 25
  • DOI: 10.1063/1.4954837

Experimental Evidence for Dark Excitons in Monolayer WSe 2
journal, December 2015


Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016


MoS2 transistors with 1-nanometer gate lengths
journal, October 2016


Exciton Radiative Lifetimes in Two-Dimensional Transition Metal Dichalcogenides
journal, March 2015

  • Palummo, Maurizia; Bernardi, Marco; Grossman, Jeffrey C.
  • Nano Letters, Vol. 15, Issue 5
  • DOI: 10.1021/nl503799t

Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2
journal, March 2010

  • Lee, Changgu; Yan, Hugen; Brus, Louis E.
  • ACS Nano, Vol. 4, Issue 5
  • DOI: 10.1021/nn1003937

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
journal, March 2014

  • Ross, Jason S.; Klement, Philip; Jones, Aaron M.
  • Nature Nanotechnology, Vol. 9, Issue 4
  • DOI: 10.1038/nnano.2014.26

Fast exciton annihilation by capture of electrons or holes by defects via Auger scattering in monolayer metal dichalcogenides
journal, April 2015


Observation of Excitonic Rydberg States in Monolayer MoS 2 and WS 2 by Photoluminescence Excitation Spectroscopy
journal, April 2015

  • Hill, Heather M.; Rigosi, Albert F.; Roquelet, Cyrielle
  • Nano Letters, Vol. 15, Issue 5
  • DOI: 10.1021/nl504868p

Surface Defects on Natural MoS 2
journal, May 2015

  • Addou, Rafik; Colombo, Luigi; Wallace, Robert M.
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 22
  • DOI: 10.1021/acsami.5b01778

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
journal, March 2016


Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
journal, March 2014

  • Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
  • Nature Nanotechnology, Vol. 9, Issue 4
  • DOI: 10.1038/nnano.2014.25

Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide
journal, September 2014

  • Sun, Dezheng; Rao, Yi; Reider, Georg A.
  • Nano Letters, Vol. 14, Issue 10
  • DOI: 10.1021/nl5021975

Exciton–polaritons in van der Waals heterostructures embedded in tunable microcavities
journal, October 2015

  • Dufferwiel, S.; Schwarz, S.; Withers, F.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9579

Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
journal, September 2015

  • Moody, Galan; Kavir Dass, Chandriker; Hao, Kai
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9315

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Low-temperature photocarrier dynamics in monolayer MoS 2
journal, September 2011

  • Korn, T.; Heydrich, S.; Hirmer, M.
  • Applied Physics Letters, Vol. 99, Issue 10
  • DOI: 10.1063/1.3636402

Binding energies and spatial structures of small carrier complexes in monolayer transition-metal dichalcogenides via diffusion Monte Carlo
journal, October 2015

  • Mayers, Matthew Z.; Berkelbach, Timothy C.; Hybertsen, Mark S.
  • Physical Review B, Vol. 92, Issue 16
  • DOI: 10.1103/PhysRevB.92.161404

Single-Layer MoS2 Phototransistors
journal, December 2011

  • Yin, Zongyou; Li, Hai; Li, Hong
  • ACS Nano, Vol. 6, Issue 1, p. 74-80
  • DOI: 10.1021/nn2024557

Electrostatic Screening of Charged Defects in Monolayer MoS 2
journal, April 2017


Highly Stable Near-Unity Photoluminescence Yield in Monolayer MoS 2 by Fluoropolymer Encapsulation and Superacid Treatment
journal, April 2017


Near-unity photoluminescence quantum yield in MoS2
journal, November 2015


Get the Basics Right: Jacobian Conversion of Wavelength and Energy Scales for Quantitative Analysis of Emission Spectra
journal, October 2013

  • Mooney, Jonathan; Kambhampati, Patanjali
  • The Journal of Physical Chemistry Letters, Vol. 4, Issue 19
  • DOI: 10.1021/jz401508t

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
journal, May 2013

  • Zhou, Wu; Zou, Xiaolong; Najmaei, Sina
  • Nano Letters, Vol. 13, Issue 6, p. 2615-2622
  • DOI: 10.1021/nl4007479

Valleytronics in 2D materials
journal, August 2016


Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2
journal, August 2014


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2
journal, November 2014


Radiative lifetime of free excitons in quantum wells
journal, March 1991

  • Andreani, Lucio Claudio; Tassone, Francesco; Bassani, Franco
  • Solid State Communications, Vol. 77, Issue 9
  • DOI: 10.1016/0038-1098(91)90761-J

Exciton-dominant electroluminescence from a diode of monolayer MoS 2
journal, May 2014

  • Ye, Yu; Ye, Ziliang; Gharghi, Majid
  • Applied Physics Letters, Vol. 104, Issue 19
  • DOI: 10.1063/1.4875959

Electroluminescence in Single Layer MoS2
journal, March 2013

  • Sundaram, R. S.; Engel, M.; Lombardo, A.
  • Nano Letters, Vol. 13, Issue 4, p. 1416-1421
  • DOI: 10.1021/nl400516a