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Title: Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed Ge{sub x}Si{sub 1-x}/Si

Abstract

Lattice-matched GaAs and InGaP structures on strain-relieved Ge/graded GeSi/Si without increasing the threading dislocation density at the III-V/Ge interface have been successfully grown. The results show that exposure of the Ge surface to As{sub 2} produces a drastic change in the step structure of the Ge surface. Subsequent exposure to Ga and continuation of growth invariably produces three-dimensional growth and a high threading dislocation density at the GaAs/Ge interface. However, exposure of the Ge surface to Ga does not appear to change the Ge step structure, and subsequent growth of GaAs leads to near two-dimensional growth and no massive increase in threading dislocation density at the GaAs/Ge interface as in the case of As{sub 2} exposure. InGaP light-emitting homojunction diodes have been fabricated on the relaxed Ge/graded GeSi/Si. Room-temperature operation was achieved with a surface-emitting output power of {approximately} 10 mW/cm{sup 2}. The best dislocation density achieved was 5x10{sup 6}-10{sup 7} cm{sup {minus}2} in the InGaP/GaAs/Ge/graded GeSi/Si structure. 9 refs., 3 figs.

Authors:
; ;  [1]
  1. AT&T Bell Lab., Murray Hill, NJ (United States); and others
Publication Date:
OSTI Identifier:
147026
Report Number(s):
CONF-9210296-
Journal ID: JVTBD9; ISSN 0734-211X; TRN: 95:007540-0034
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 11; Journal Issue: 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM PHOSPHIDES; CRYSTAL GROWTH; PHYSICAL PROPERTIES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; GERMANIUM SILICIDES; CRYSTAL LATTICES; INTERFACES; LIGHT EMITTING DIODES; DISLOCATIONS

Citation Formats

Kuo, J M, Fitzgerald, E A, and Xie, Y H. Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed Ge{sub x}Si{sub 1-x}/Si. United States: N. p., 1993. Web. doi:10.1116/1.586765.
Kuo, J M, Fitzgerald, E A, & Xie, Y H. Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed Ge{sub x}Si{sub 1-x}/Si. United States. doi:10.1116/1.586765.
Kuo, J M, Fitzgerald, E A, and Xie, Y H. Sat . "Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed Ge{sub x}Si{sub 1-x}/Si". United States. doi:10.1116/1.586765.
@article{osti_147026,
title = {Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed Ge{sub x}Si{sub 1-x}/Si},
author = {Kuo, J M and Fitzgerald, E A and Xie, Y H},
abstractNote = {Lattice-matched GaAs and InGaP structures on strain-relieved Ge/graded GeSi/Si without increasing the threading dislocation density at the III-V/Ge interface have been successfully grown. The results show that exposure of the Ge surface to As{sub 2} produces a drastic change in the step structure of the Ge surface. Subsequent exposure to Ga and continuation of growth invariably produces three-dimensional growth and a high threading dislocation density at the GaAs/Ge interface. However, exposure of the Ge surface to Ga does not appear to change the Ge step structure, and subsequent growth of GaAs leads to near two-dimensional growth and no massive increase in threading dislocation density at the GaAs/Ge interface as in the case of As{sub 2} exposure. InGaP light-emitting homojunction diodes have been fabricated on the relaxed Ge/graded GeSi/Si. Room-temperature operation was achieved with a surface-emitting output power of {approximately} 10 mW/cm{sup 2}. The best dislocation density achieved was 5x10{sup 6}-10{sup 7} cm{sup {minus}2} in the InGaP/GaAs/Ge/graded GeSi/Si structure. 9 refs., 3 figs.},
doi = {10.1116/1.586765},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 3,
volume = 11,
place = {United States},
year = {1993},
month = {5}
}