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Title: Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Authors:
; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1470141
DOE Contract Number:  
SC0012575
Resource Type:
Journal Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Related Information: CCDM partners with Temple University (lead); Brookhaven National Laboratory; Drexel University; Duke University; North Carolina State University; Northeastern University; Princeton University; Rice University; University of Pennsylvania; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
catalysis (heterogeneous), solar (photovoltaic), energy storage (including batteries and capacitors), hydrogen and fuel cells, defects, mechanical behavior, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States: N. p., 2018. Web. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, & Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Fri . "Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts". United States. doi:10.1038/s41598-018-19367-1.
@article{osti_1470141,
title = {Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts},
author = {Saenz, Gustavo A. and Karapetrov, Goran and Curtis, James and Kaul, Anupama B.},
abstractNote = {},
doi = {10.1038/s41598-018-19367-1},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 8,
place = {United States},
year = {2018},
month = {1}
}

Works referenced in this record:

Wearable and Highly Sensitive Graphene Strain Sensors for Human Motion Monitoring
journal, April 2014

  • Wang, Yan; Wang, Li; Yang, Tingting
  • Advanced Functional Materials, Vol. 24, Issue 29
  • DOI: 10.1002/adfm.201400379

High-Gain Phototransistors Based on a CVD MoS 2 Monolayer
journal, May 2013

  • Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao
  • Advanced Materials, Vol. 25, Issue 25
  • DOI: 10.1002/adma.201301244

Photoresponse of Natural van der Waals Heterostructures
journal, May 2017


Multilayer MoS 2 transistors enabled by a facile dry-transfer technique and thermal annealing
journal, November 2014

  • Yang, Rui; Zheng, Xuqian; Wang, Zenghui
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 6
  • DOI: 10.1116/1.4898117

Photoconductivity of solution-processed MoS2 films
journal, January 2013

  • Cunningham, Graeme; Khan, Umar; Backes, Claudia
  • Journal of Materials Chemistry C, Vol. 1, Issue 41
  • DOI: 10.1039/c3tc31402b

Enhancement of Photovoltaic Response in Multilayer MoS 2 Induced by Plasma Doping
journal, April 2014

  • Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai
  • ACS Nano, Vol. 8, Issue 5
  • DOI: 10.1021/nn5013429

High Responsivity, Large-Area Graphene/MoS 2 Flexible Photodetectors
journal, September 2016


Photoluminescence of freestanding single- and few-layer MoS 2
journal, March 2014


High mobility ambipolar MoS 2 field-effect transistors: Substrate and dielectric effects
journal, January 2013

  • Bao, Wenzhong; Cai, Xinghan; Kim, Dohun
  • Applied Physics Letters, Vol. 102, Issue 4
  • DOI: 10.1063/1.4789365

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
journal, May 2013


Two-Dimensional Crystals: Managing Light for Optoelectronics
journal, June 2013


Photocurrent generation with two-dimensional van der Waals semiconductors
journal, January 2015

  • Buscema, Michele; Island, Joshua O.; Groenendijk, Dirk J.
  • Chemical Society Reviews, Vol. 44, Issue 11
  • DOI: 10.1039/C5CS00106D

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
journal, October 2013

  • Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit
  • Nature Nanotechnology, Vol. 8, Issue 11
  • DOI: 10.1038/nnano.2013.206

Control of Schottky Barriers in Single Layer MoS 2 Transistors with Ferromagnetic Contacts
journal, June 2013

  • Chen, Jen-Ru; Odenthal, Patrick M.; Swartz, Adrian G.
  • Nano Letters, Vol. 13, Issue 7
  • DOI: 10.1021/nl4010157

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2
journal, May 2013

  • He, Keliang; Poole, Charles; Mak, Kin Fai
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4013166

Two-dimensional layered materials: Structure, properties, and prospects for device applications
journal, February 2014

  • Kaul, Anupama B.
  • Journal of Materials Research, Vol. 29, Issue 3
  • DOI: 10.1557/jmr.2014.6

Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer
journal, February 2016

  • Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep20890

On the chemically-assisted excitonic enhancement in environmentally-friendly solution dispersions of two-dimensional MoS 2 and WS 2
journal, January 2017

  • Fadil, Dalal; Hossain, Ridwan F.; Saenz, Gustavo A.
  • Journal of Materials Chemistry C, Vol. 5, Issue 22
  • DOI: 10.1039/C7TC01001J

Hybrid 2D-0D MoS 2 -PbS Quantum Dot Photodetectors
journal, November 2014

  • Kufer, Dominik; Nikitskiy, Ivan; Lasanta, Tania
  • Advanced Materials, Vol. 27, Issue 1
  • DOI: 10.1002/adma.201402471

Schottky barrier heights for Au and Pd contacts to MoS2
journal, September 2014

  • Kaushik, Naveen; Nipane, Ankur; Basheer, Firdous
  • Applied Physics Letters, Vol. 105, Issue 11
  • DOI: 10.1063/1.4895767

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

  • Radisavljevic, Branimir; Kis, Andras
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3687

Phototransistors: High-Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012)
journal, November 2012

  • Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha
  • Advanced Materials, Vol. 24, Issue 43
  • DOI: 10.1002/adma.201290270

A roadmap for graphene
journal, October 2012

  • Novoselov, K. S.; Fal′ko, V. I.; Colombo, L.
  • Nature, Vol. 490, Issue 7419
  • DOI: 10.1038/nature11458

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014


Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014

  • Liu, Han; Neal, Adam T.; Zhu, Zhen
  • ACS Nano, Vol. 8, Issue 4
  • DOI: 10.1021/nn501226z

Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS 2 with resonant plasmonic nanoshells
journal, January 2014

  • Sobhani, Ali; Lauchner, Adam; Najmaei, Sina
  • Applied Physics Letters, Vol. 104, Issue 3
  • DOI: 10.1063/1.4862745

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

Electronic properties of cleaved molybdenum disulphide surfaces
journal, December 1974


Mechanisms of Photoconductivity in Atomically Thin MoS 2
journal, October 2014

  • Furchi, Marco M.; Polyushkin, Dmitry K.; Pospischil, Andreas
  • Nano Letters, Vol. 14, Issue 11
  • DOI: 10.1021/nl502339q

A thermally-invariant, additively manufactured, high-power graphene resistor for flexible electronics
journal, April 2017


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Tunable band gaps in bilayer transition-metal dichalcogenides
journal, November 2011


High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012

  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v

Highly Sensitive, Encapsulated MoS 2 Photodetector with Gate Controllable Gain and Speed
journal, October 2015


MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
journal, June 2012

  • Lee, Hee Sung; Min, Sung-Wook; Chang, Youn-Gyung
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl301485q

Biocompatible, large-format, inkjet printed heterostructure MoS2-graphene photodetectors on conformable substrates
journal, September 2017

  • Hossain, Ridwan F.; Deaguero, Isaac G.; Boland, Thomas
  • npj 2D Materials and Applications, Vol. 1, Issue 1
  • DOI: 10.1038/s41699-017-0034-2