Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features
- AT&T Bell Lab. Murray Hill, NJ (United States); and others
Epitaxial growth of InP and GaAs (AlGaAs) in narrow ({approximately} 1 {mu}m wide) trenches and around mesas formed by highly anisotropic dry etching was performed by low-pressure (30 Torr) organometallic vapor phase epitaxy (OMVPE) and metalorganix molecular beam epitaxy (MOMBE). For the [110] oriented trenches and mesas, MOMBE produced highly selective regrowth of both materials under normal growth conditions. By contrast, it was necessary to add CCl{sub 4} to t;he growth chemistry in OMVPE to eliminate deposition on the SiN{sub x} mask during growth in trenches and around mesas. Due to growth rate enhancement near the edge of the masked regions, acceptable control of the growth thickness in OMVPE could only be obtained for the case of mesas, but not for narrow trenches. 32 refs., 7 figs.
- OSTI ID:
- 146996
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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