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Title: Biexcitons in monolayer transition metal dichalcogenides tuned by magnetic fields

Abstract

We present time-integrated four-wave mixing measurements on monolayer MoSe 2 in magnetic fields up to 25 T. The experimental data together with time-dependent density function theory calculations provide interesting insights into the biexciton formation and dynamics. In the presence of magnetic fields the coherence at negative and positive time delays is dominated by intervalley biexcitons. We demonstrate that magnetic fields can serve as a control to enhance the biexciton formation and help search for more exotic states of matter, including the creation of multiple exciton complexes and excitonic condensates.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1];  [2];  [3];  [3];  [4];  [4];  [4];  [1]
  1. Univ. of South Florida, Tampa, FL (United States)
  2. Univ. of Central Florida, Orlando, FL (United States)
  3. Florida State Univ., Tallahassee, FL (United States)
  4. Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Publication Date:
Research Org.:
Univ. of South Florida, Tampa, FL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
OSTI Identifier:
1469033
Alternate Identifier(s):
OSTI ID: 1511452
Grant/Contract Number:  
SC0012635; FG02-07ER46345; DOE-DE-FG02-07ER46345
Resource Type:
Journal Article: Published Article
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Stevens, Christopher. E., Paul, Jagannath, Cox, Timothy, Sahoo, Prasana K., Gutiérrez, Humberto R., Turkowski, Volodymyr, Semenov, Dimitry, McGill, Steven A., Kapetanakis, Myron D., Perakis, Ilias E., Hilton, David J., and Karaiskaj, Denis. Biexcitons in monolayer transition metal dichalcogenides tuned by magnetic fields. United States: N. p., 2018. Web. doi:10.1038/s41467-018-05643-1.
Stevens, Christopher. E., Paul, Jagannath, Cox, Timothy, Sahoo, Prasana K., Gutiérrez, Humberto R., Turkowski, Volodymyr, Semenov, Dimitry, McGill, Steven A., Kapetanakis, Myron D., Perakis, Ilias E., Hilton, David J., & Karaiskaj, Denis. Biexcitons in monolayer transition metal dichalcogenides tuned by magnetic fields. United States. doi:10.1038/s41467-018-05643-1.
Stevens, Christopher. E., Paul, Jagannath, Cox, Timothy, Sahoo, Prasana K., Gutiérrez, Humberto R., Turkowski, Volodymyr, Semenov, Dimitry, McGill, Steven A., Kapetanakis, Myron D., Perakis, Ilias E., Hilton, David J., and Karaiskaj, Denis. Thu . "Biexcitons in monolayer transition metal dichalcogenides tuned by magnetic fields". United States. doi:10.1038/s41467-018-05643-1.
@article{osti_1469033,
title = {Biexcitons in monolayer transition metal dichalcogenides tuned by magnetic fields},
author = {Stevens, Christopher. E. and Paul, Jagannath and Cox, Timothy and Sahoo, Prasana K. and Gutiérrez, Humberto R. and Turkowski, Volodymyr and Semenov, Dimitry and McGill, Steven A. and Kapetanakis, Myron D. and Perakis, Ilias E. and Hilton, David J. and Karaiskaj, Denis},
abstractNote = {We present time-integrated four-wave mixing measurements on monolayer MoSe2 in magnetic fields up to 25 T. The experimental data together with time-dependent density function theory calculations provide interesting insights into the biexciton formation and dynamics. In the presence of magnetic fields the coherence at negative and positive time delays is dominated by intervalley biexcitons. We demonstrate that magnetic fields can serve as a control to enhance the biexciton formation and help search for more exotic states of matter, including the creation of multiple exciton complexes and excitonic condensates.},
doi = {10.1038/s41467-018-05643-1},
journal = {Nature Communications},
issn = {2041-1723},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1038/s41467-018-05643-1

Citation Metrics:
Cited by: 2 works
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Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010