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Title: Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals

Abstract

The success of strain engineering has made a step further for the enhancement of material properties and the introduction of new physics, especially with the discovery of the critical roles of strain in the heterogeneous interface between two dissimilar materials (for example, FeSe/SrTiO 3). On the other hand, the strain manipulation has been limited to chemical epitaxy and nanocomposites that, to a large extent, limit the possible material systems that can be explored. By defect engineering, we obtained, for the first time, dense three-dimensional strongly correlated VO 2±$$\delta$$ epitaxial nanoforest arrays that can be used as a novel "substrate" for dynamic strain engineering, due to its metal-insulator transition. The highly dense nanoforest is promising for the possible realization of bulk strain similar to the effect of nanocomposites. By growing single-crystalline halide perovskite CsPbBr 3, a mechanically soft and emerging semiconducting material, onto the VO 2±$$\delta$$, a heterogeneous interface is created that can entail a ~1% strain transfer upon the metal-insulator transition of VO 2±$$\delta$$. This strain is large enough to trigger a structural phase transition featured by PbX 6 octahedral tilting along with a modification of the photoluminescence energy landscape in halide perovskite. Our findings suggest a promising strategy of dynamic strain engineering in a heterogeneous interface carrying soft and strain-sensitive semiconductors that can happen at a larger volumetric value surpassing the conventional critical thickness limit.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1];  [3];  [3];  [2];  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
  2. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy
  3. Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Rensselaer Polytechnic Institute; Air Force Research Laboratory (AFRL). Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); USDOE
OSTI Identifier:
1468627
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 4; Journal Issue: 5; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Yiping, Sun, Xin, Chen, Zhizhong, Cai, Zhonghou, Zhou, Hua, Lu, Toh-Ming, and Shi, Jian. Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals. United States: N. p., 2018. Web. doi:10.1126/sciadv.aar3679.
Wang, Yiping, Sun, Xin, Chen, Zhizhong, Cai, Zhonghou, Zhou, Hua, Lu, Toh-Ming, & Shi, Jian. Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals. United States. doi:10.1126/sciadv.aar3679.
Wang, Yiping, Sun, Xin, Chen, Zhizhong, Cai, Zhonghou, Zhou, Hua, Lu, Toh-Ming, and Shi, Jian. Tue . "Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals". United States. doi:10.1126/sciadv.aar3679. https://www.osti.gov/servlets/purl/1468627.
@article{osti_1468627,
title = {Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals},
author = {Wang, Yiping and Sun, Xin and Chen, Zhizhong and Cai, Zhonghou and Zhou, Hua and Lu, Toh-Ming and Shi, Jian},
abstractNote = {The success of strain engineering has made a step further for the enhancement of material properties and the introduction of new physics, especially with the discovery of the critical roles of strain in the heterogeneous interface between two dissimilar materials (for example, FeSe/SrTiO3). On the other hand, the strain manipulation has been limited to chemical epitaxy and nanocomposites that, to a large extent, limit the possible material systems that can be explored. By defect engineering, we obtained, for the first time, dense three-dimensional strongly correlated VO2±$\delta$ epitaxial nanoforest arrays that can be used as a novel "substrate" for dynamic strain engineering, due to its metal-insulator transition. The highly dense nanoforest is promising for the possible realization of bulk strain similar to the effect of nanocomposites. By growing single-crystalline halide perovskite CsPbBr3, a mechanically soft and emerging semiconducting material, onto the VO2±$\delta$, a heterogeneous interface is created that can entail a ~1% strain transfer upon the metal-insulator transition of VO2±$\delta$. This strain is large enough to trigger a structural phase transition featured by PbX6 octahedral tilting along with a modification of the photoluminescence energy landscape in halide perovskite. Our findings suggest a promising strategy of dynamic strain engineering in a heterogeneous interface carrying soft and strain-sensitive semiconductors that can happen at a larger volumetric value surpassing the conventional critical thickness limit.},
doi = {10.1126/sciadv.aar3679},
journal = {Science Advances},
issn = {2375-2548},
number = 5,
volume = 4,
place = {United States},
year = {2018},
month = {5}
}

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Works referenced in this record:

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