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Title: Zero Hall conductivity and its electronic origin in a Cr-doped topological insulator

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1467962
Grant/Contract Number:  
FG02-05ER46237
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 98 Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Jeongwoo, Hou, Yusheng, Park, Noejung, and Wu, Ruqian. Zero Hall conductivity and its electronic origin in a Cr-doped topological insulator. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.98.081117.
Kim, Jeongwoo, Hou, Yusheng, Park, Noejung, & Wu, Ruqian. Zero Hall conductivity and its electronic origin in a Cr-doped topological insulator. United States. doi:10.1103/PhysRevB.98.081117.
Kim, Jeongwoo, Hou, Yusheng, Park, Noejung, and Wu, Ruqian. Fri . "Zero Hall conductivity and its electronic origin in a Cr-doped topological insulator". United States. doi:10.1103/PhysRevB.98.081117.
@article{osti_1467962,
title = {Zero Hall conductivity and its electronic origin in a Cr-doped topological insulator},
author = {Kim, Jeongwoo and Hou, Yusheng and Park, Noejung and Wu, Ruqian},
abstractNote = {},
doi = {10.1103/PhysRevB.98.081117},
journal = {Physical Review B},
number = 8,
volume = 98,
place = {United States},
year = {Fri Aug 31 00:00:00 EDT 2018},
month = {Fri Aug 31 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 31, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

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Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
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