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Title: Observation of electron states of small period artificial graphene in nano-patterned GaAs quantum wells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4962461· OSTI ID:1467886
ORCiD logo [1];  [1];  [2];  [1];  [3];  [4];  [5];  [6];  [7];  [7]
  1. Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics
  2. Columbia Univ., New York, NY (United States). Dept. of Physics
  3. Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics, and Dept. of Physics
  4. Istituto Italiano di Tecnologia, Genova (Italy). Graphene Lab.; Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa (Italy). National Enterprise for nanoScience and nanoTechnology (NEST)
  5. Purdue Univ., West Lafayette, IN (United States). Birck Nanotechnology Center, Dept. of Physics and Astronomy, School of Materials Engineering and School of Electrical and Computer Engineering
  6. Purdue Univ., West Lafayette, IN (United States). Birck Nanotechnology Center, School of Materials Engineering
  7. Princeton Univ., NJ (United States). Dept. of Electrical Engineering
+ Show Author Affiliations

Engineered honeycomb lattices, called artificial graphene (AG), are tunable platforms for the study of novel electronic states related to Dirac physics. Here in this work, we report the achievement of electronic bands of the honeycomb topology with the period as low as 40 nm on the nano-patterned modulation-doped AlGaAs/GaAs quantum wells. Resonant inelastic light scattering spectra reveal peaks which are interpreted as combined electronic transitions between subbands of the quantum well confinement with a change in the AG band index. Spectra lineshapes are explained by joint density of states obtained from the calculated AG electron band structures. These results provide a basis for further advancements in AG physics.

Research Organization:
Columbia Univ., New York, NY (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF); Italian Ministry of Research (MIUR); European Union (EU). European Graphene Flagship
Grant/Contract Number:
SC0010695; SC0006671
OSTI ID:
1467886
Alternate ID(s):
OSTI ID: 1323994
Journal Information:
Applied Physics Letters, Vol. 109, Issue 11; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

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Cited By (3)

Emerging many-body effects in semiconductor artificial graphene with low disorder journal August 2018
New topological states in HgTe quantum wells from defect patterning journal January 2018
Experimental observation of Dirac cones in artificial graphene lattices journal November 2020

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