On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center
- Chongqing Univ., Chongqing (China). Key Lab. of Optoelectronic Technology and System, Education Ministry of China
- Tianjin Univ., Tianjin (China). School of Precision Instruments and Optoelectronics Engineering
- Univ. of Central Florida, Orlando, FL (United States). College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL)
- Singapore Univ.of Technology and Design, Singapore (Singapore). Photonics Devices and Systems Group
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering, and Materials Processing Center
Here, we experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.
- Research Organization:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); Ministry of Defense, Singapore
- Grant/Contract Number:
- NA0002509; HDTRA1-13-1-0001
- OSTI ID:
- 1467877
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 7; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 34 works
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