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Title: Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices

Abstract

For this study, perovskite nickelate heterostructures consisting of single unit cells of EuNiO 3 and LaNiO 3 have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic and magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of the EuNiO 3 layer. In sharp contrast to bulk LaNiO 3 or EuNiO 3, the superlattices grown under tensile strains exhibit metal-to-insulator transitions (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to a strain-induced self-doping effect without any chemical doping.

Authors:
 [1];  [2];  [1];  [3];  [3];  [3];  [4];  [3]
  1. Indian Inst. of Science (IISc), Bangalore (India). Dept. of Physics
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  3. Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; Gordon and Betty Moore Foundation
OSTI Identifier:
1466980
Alternate Identifier(s):
OSTI ID: 1459685
Report Number(s):
BNL-208013-2018-JAAM
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:  
SC0012704; 1047478; GBMF4534; SC00012375; AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; antiferromagnetism; insulators; metals; surface and interfacial phenomena; charge-transfer insulators; ultrathin films; laser ablation; x-ray absorption spectroscopy

Citation Formats

Middey, S., Meyers, D., Ojha, Shashank Kumar, Kareev, M., Liu, X., Cao, Y., Freeland, J. W., and Chakhalian, J.. Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.98.045115.
Middey, S., Meyers, D., Ojha, Shashank Kumar, Kareev, M., Liu, X., Cao, Y., Freeland, J. W., & Chakhalian, J.. Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices. United States. doi:10.1103/PhysRevB.98.045115.
Middey, S., Meyers, D., Ojha, Shashank Kumar, Kareev, M., Liu, X., Cao, Y., Freeland, J. W., and Chakhalian, J.. Tue . "Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices". United States. doi:10.1103/PhysRevB.98.045115.
@article{osti_1466980,
title = {Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices},
author = {Middey, S. and Meyers, D. and Ojha, Shashank Kumar and Kareev, M. and Liu, X. and Cao, Y. and Freeland, J. W. and Chakhalian, J.},
abstractNote = {For this study, perovskite nickelate heterostructures consisting of single unit cells of EuNiO3 and LaNiO3 have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic and magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of the EuNiO3 layer. In sharp contrast to bulk LaNiO3 or EuNiO3, the superlattices grown under tensile strains exhibit metal-to-insulator transitions (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to a strain-induced self-doping effect without any chemical doping.},
doi = {10.1103/PhysRevB.98.045115},
journal = {Physical Review B},
number = 4,
volume = 98,
place = {United States},
year = {Tue Jul 10 00:00:00 EDT 2018},
month = {Tue Jul 10 00:00:00 EDT 2018}
}

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Works referenced in this record:

Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039