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Title: III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates

Abstract

Substrate reuse offers a promising route toward enabling high-efficiency III-V solar cells to become cost-competitive for one-sun terrestrial applications. In this study, Ge films were spalled using an electroplated Ni stressor layer, and the fracture surface was characterized. Initial heteroepitaxial GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were found to be single crystal with nearly equivalent growth rates between growth on epi-ready and unpolished spalled Ge substrates. We show the first demonstration of III-V solar cells (GaInAsP, E g ~ 1.7 eV) grown on unpolished spalled Ge substrates to assess the viability of substrate reuse. We demonstrate equivalent performance for a solar cell grown on spalled Ge and on a coloaded epi-ready Ge substrate, despite the residual roughness on the spalled Ge substrate and the lack of any substrate surface preparation. This initial demonstration of combining substrate reuse with the ability to grow III-V solar cells using a high growth rate and high throughput deposition process is a promising step toward low-cost III-V photovoltaics.

Authors:
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Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1466560
Report Number(s):
NREL/JA-5J00-67844
Journal ID: ISSN 2156-3381
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 5; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; high-growth rate; hydride vapor phase epitaxy (HVPE); III-V semiconductor materials; spalling

Citation Formats

Jain, Nikhil, Crouse, Dustin, Simon, John, Johnston, Steve, Siol, Sebastian, Schulte, Kevin L., Packard, Corinne E., Young, David L., and Ptak, Aaron J. III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates. United States: N. p., 2018. Web. doi:10.1109/JPHOTOV.2018.2851283.
Jain, Nikhil, Crouse, Dustin, Simon, John, Johnston, Steve, Siol, Sebastian, Schulte, Kevin L., Packard, Corinne E., Young, David L., & Ptak, Aaron J. III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates. United States. https://doi.org/10.1109/JPHOTOV.2018.2851283
Jain, Nikhil, Crouse, Dustin, Simon, John, Johnston, Steve, Siol, Sebastian, Schulte, Kevin L., Packard, Corinne E., Young, David L., and Ptak, Aaron J. Sat . "III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates". United States. https://doi.org/10.1109/JPHOTOV.2018.2851283.
@article{osti_1466560,
title = {III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates},
author = {Jain, Nikhil and Crouse, Dustin and Simon, John and Johnston, Steve and Siol, Sebastian and Schulte, Kevin L. and Packard, Corinne E. and Young, David L. and Ptak, Aaron J.},
abstractNote = {Substrate reuse offers a promising route toward enabling high-efficiency III-V solar cells to become cost-competitive for one-sun terrestrial applications. In this study, Ge films were spalled using an electroplated Ni stressor layer, and the fracture surface was characterized. Initial heteroepitaxial GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were found to be single crystal with nearly equivalent growth rates between growth on epi-ready and unpolished spalled Ge substrates. We show the first demonstration of III-V solar cells (GaInAsP, E g ~ 1.7 eV) grown on unpolished spalled Ge substrates to assess the viability of substrate reuse. We demonstrate equivalent performance for a solar cell grown on spalled Ge and on a coloaded epi-ready Ge substrate, despite the residual roughness on the spalled Ge substrate and the lack of any substrate surface preparation. This initial demonstration of combining substrate reuse with the ability to grow III-V solar cells using a high growth rate and high throughput deposition process is a promising step toward low-cost III-V photovoltaics.},
doi = {10.1109/JPHOTOV.2018.2851283},
url = {https://www.osti.gov/biblio/1466560}, journal = {IEEE Journal of Photovoltaics},
issn = {2156-3381},
number = 5,
volume = 8,
place = {United States},
year = {2018},
month = {9}
}