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Title: Nontrivial Nature and Penetration Depth of Topological Surface States in SmB 6 Thin Films

Abstract

The nontrivial feature and penetration depth of the topological surface states (TSS) in SmB 6 were studied via spin pumping. The experiments used SmB 6 thin films grown on the bulk magnetic insulator Y 3Fe 5O 12 (YIG). Upon the excitation of magnetization precession in the YIG, a spin current is generated in the SmB 6 that produces, via spin--orbit coupling, a lateral electrical voltage in the film. This spin-pumping voltage signal becomes considerably stronger as the temperature decreases from 150 to 10 K, and such an enhancement most likely originates from the spin-momentum locking of the TSS and may thereby serve as evidence for the nontrivial nature of the TSS. The voltage data also show a unique film thickness dependence that suggests a TSS depth of ~32 nm. Finally, the spin--pumping results arc supported by transport measurements and analyses using a tight binding model.

Authors:
 [1];  [2];  [3];  [4];  [1];  [1];  [5];  [4];  [4];  [3];  [2];  [1]
  1. Colorado State Univ., Fort Collins, CO (United States)
  2. Johns Hopkins Univ., Baltimore, MD (United States)
  3. Univ. of California, Irvine, CA (United States)
  4. Argonne National Lab. (ANL), Lemont, IL (United States)
  5. Colorado State Univ., Fort Collins, CO (United States); St. Petersburg Electrotechnical Univ., St. Petersburg (Russia)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1466390
Alternate Identifier(s):
OSTI ID: 1437688
Grant/Contract Number:  
AC02-06CH11357; SC0009390; SC0012670
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 120; Journal Issue: 20; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liu, Tao, Li, Yufan, Gu, Lei, Ding, Junjia, Chang, Houchen, Janantha, P. A. Praveen, Kalinikos, Boris, Novosad, Valentyn, Hoffmann, Axel, Wu, Ruqian, Chien, C. L., and Wu, Mingzhong. Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.120.207206.
Liu, Tao, Li, Yufan, Gu, Lei, Ding, Junjia, Chang, Houchen, Janantha, P. A. Praveen, Kalinikos, Boris, Novosad, Valentyn, Hoffmann, Axel, Wu, Ruqian, Chien, C. L., & Wu, Mingzhong. Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films. United States. doi:10.1103/PhysRevLett.120.207206.
Liu, Tao, Li, Yufan, Gu, Lei, Ding, Junjia, Chang, Houchen, Janantha, P. A. Praveen, Kalinikos, Boris, Novosad, Valentyn, Hoffmann, Axel, Wu, Ruqian, Chien, C. L., and Wu, Mingzhong. Fri . "Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films". United States. doi:10.1103/PhysRevLett.120.207206.
@article{osti_1466390,
title = {Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films},
author = {Liu, Tao and Li, Yufan and Gu, Lei and Ding, Junjia and Chang, Houchen and Janantha, P. A. Praveen and Kalinikos, Boris and Novosad, Valentyn and Hoffmann, Axel and Wu, Ruqian and Chien, C. L. and Wu, Mingzhong},
abstractNote = {The nontrivial feature and penetration depth of the topological surface states (TSS) in SmB6 were studied via spin pumping. The experiments used SmB6 thin films grown on the bulk magnetic insulator Y3Fe5O12 (YIG). Upon the excitation of magnetization precession in the YIG, a spin current is generated in the SmB6 that produces, via spin--orbit coupling, a lateral electrical voltage in the film. This spin-pumping voltage signal becomes considerably stronger as the temperature decreases from 150 to 10 K, and such an enhancement most likely originates from the spin-momentum locking of the TSS and may thereby serve as evidence for the nontrivial nature of the TSS. The voltage data also show a unique film thickness dependence that suggests a TSS depth of ~32 nm. Finally, the spin--pumping results arc supported by transport measurements and analyses using a tight binding model.},
doi = {10.1103/PhysRevLett.120.207206},
journal = {Physical Review Letters},
number = 20,
volume = 120,
place = {United States},
year = {Fri May 18 00:00:00 EDT 2018},
month = {Fri May 18 00:00:00 EDT 2018}
}

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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010