Stressor-layer-induced elastic strain sharing in SrTiO3 complex oxide sheets
- Univ. of Wisconsin-Madison, Madison, WI (United States). Dept. of Materials Science and Engineering
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO3 sheets using silicon nitride stressor layers. Plasma-enhanced chemical vapor deposited conformal silicon nitrate stressor layers produce an elastic strain consistent with the magnitude of the residual stress introduced during the deposition. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO3 sheets is on the order of 10-4, which is consistent with the predictions of an elastic model. Elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect not achievable in heteroepitaxy on rigid substrates.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); University of Wisconsin; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- FG02-04ER46147; DMR-1121288; DMR-1720415; DGE-1256259; AC02-06CH11357
- OSTI ID:
- 1423428
- Alternate ID(s):
- OSTI ID: 1423384; OSTI ID: 1466367
- Journal Information:
- Applied Physics Letters, Vol. 112, Issue 9; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 1 work
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