Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies

Hruszkewycz, S. O.; Maddali, S.; Anderson, C. P.; Cha, W.; Miao, K. C.; Highland, M. J.; Ulvestad, A.; Awschalom, D. D.; Heremans, F. J.

doi:10.1103/PhysRevMaterials.2.086001

Title: Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies

Journal Article · Wed Aug 01 00:00:00 EDT 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.2.086001· OSTI ID:1466340

Hruszkewycz, S. O. ^[1]; Maddali, S. ^[1]; Anderson, C. P. ^[2]; Cha, W. ^[3]; Miao, K. C. ^[4]; Highland, M. J. ^[1]; Ulvestad, A. ^[1]; Awschalom, D. D. ^[5]; Heremans, F. J. ^[5]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Univ. of Chicago, IL (United States). Dept. of Physics; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Univ. of Chicago, IL (United States). Inst. for Molecular Engineering; Argonne National Lab. (ANL), Argonne, IL (United States). Inst. for Molecular Engineering & Materials Science Division

The crystalline strain properties of nanoparticles have broad implications in a number of emerging fields, including quantum and biological sensing in which heterogeneous internal strain fields are detrimental to performance. Here we used synchrotron-based Bragg coherent x-ray diffraction imaging (BCDI) to measure three-dimensional lattice strain fields within individual 3C-SiC nanoparticles, a candidate host material for quantum sensing, as a function of temperature during and after annealing up to 900 degrees C. We observed pronounced homogenization of the initial strain field at temperatures above 500 degrees C, and we find that the surface layers and central volumes of the nanoparticles reduce strain at similar rates, suggesting a uniform healing mechanism. Thus, we attribute the observed strain homogenization to activation of mobile point defects that annihilate and improve the overall quality of the crystal lattice. This work also establishes the feasibility of performing BCDI at high temperatures (up to 900 degrees C) to map structural hystereses relevant to the processing of quantum nanomaterials.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1466340

Alternate ID(s):: OSTI ID: 1462585

Journal Information:: Physical Review Materials, Vol. 2, Issue 8; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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Cited By (2)

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Electrical and optical control of single spins integrated in scalable semiconductor devices Anderson, Christopher P.; Bourassa, Alexandre; Miao, Kevin C. Science, Vol. 366, Issue 6470 https://doi.org/10.1126/science.aax9406	journal	December 2019

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