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Title: Detection of charge density wave phase transitions at 1T-TaS2/GaAs interfaces

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4982964· OSTI ID:1466214

The transition metal dichalcogenide 1T-TaS2 is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. In this paper, we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS2 in intimate van der Waals contact with n-type GaAs substrates. The extracted barrier parameters (ideality, barrier height, and built-in potential) experience pronounced changes across the Mott-CDW transition in the 1T-TaS2. Finally, the CDW-induced changes in barrier properties are well described by a bond polarization model which upon decreasing temperature gives rise to an increased potential drop across the interfacial region due to the localization of carriers and a decreased dielectric constant.

Research Organization:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
FG02-86ER45268; DMR-1305783
OSTI ID:
1466214
Alternate ID(s):
OSTI ID: 1361870
Journal Information:
Applied Physics Letters, Vol. 110, Issue 18; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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Cited By (1)

Low Temperature Specific Heat of Layered Transition Metal Dichalcogenides journal October 2019