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Title: Accelerated aging in 4H-SiC as a betavoltaic semiconductors using an electron beam system

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Lawrence Livermore National Laboratory
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1466171
Report Number(s):
LLNL-PROC-741368
895687
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Conference
Resource Relation:
Conference: Atlanta, GA, United States
Country of Publication:
United States
Language:
English
Subject:
Energy - Conversion, Engineering - Electronic and electrical engineering, Nuclear science and engineering, Physics - Nuclear physics and radiation physics

Citation Formats

Shao, Q, Voss, L F, Murphy, J M, Frye, C D, Henderson, R A, Stoyer, M A, Qu, D, and Nikolic, R J. Accelerated aging in 4H-SiC as a betavoltaic semiconductors using an electron beam system. United States: N. p., 2017. Web.
Shao, Q, Voss, L F, Murphy, J M, Frye, C D, Henderson, R A, Stoyer, M A, Qu, D, & Nikolic, R J. Accelerated aging in 4H-SiC as a betavoltaic semiconductors using an electron beam system. United States.
Shao, Q, Voss, L F, Murphy, J M, Frye, C D, Henderson, R A, Stoyer, M A, Qu, D, and Nikolic, R J. Fri . "Accelerated aging in 4H-SiC as a betavoltaic semiconductors using an electron beam system". United States. https://www.osti.gov/servlets/purl/1466171.
@article{osti_1466171,
title = {Accelerated aging in 4H-SiC as a betavoltaic semiconductors using an electron beam system},
author = {Shao, Q and Voss, L F and Murphy, J M and Frye, C D and Henderson, R A and Stoyer, M A and Qu, D and Nikolic, R J},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}

Conference:
Other availability
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