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Title: PMMA-Assisted Plasma Patterning of Graphene

Abstract

Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. In conclusion, we produce graphene ribbon patterns with ~50 nm width and integrate them into solid state and liquid gated transistor devices.

Authors:
ORCiD logo [1];  [2];  [2];  [2]; ORCiD logo [3]
  1. Univ. Peruana de Ciencias Aplicadas, Lima (Peru); Argonne National Lab. (ANL), Argonne, IL (United States); Texas A & M Univ., College Station, TX (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1466086
Alternate Identifier(s):
OSTI ID: 1474154
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Published Article
Journal Name:
Journal of Nanotechnology
Additional Journal Information:
Journal Volume: 2018; Journal ID: ISSN 1687-9503
Publisher:
Hindawi
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bobadilla, Alfredo D., Ocola, Leonidas E., Sumant, Anirudha V., Kaminski, Michael, and Seminario, Jorge M.. PMMA-Assisted Plasma Patterning of Graphene. United States: N. p., 2018. Web. doi:10.1155/2018/8349626.
Bobadilla, Alfredo D., Ocola, Leonidas E., Sumant, Anirudha V., Kaminski, Michael, & Seminario, Jorge M.. PMMA-Assisted Plasma Patterning of Graphene. United States. doi:10.1155/2018/8349626.
Bobadilla, Alfredo D., Ocola, Leonidas E., Sumant, Anirudha V., Kaminski, Michael, and Seminario, Jorge M.. Thu . "PMMA-Assisted Plasma Patterning of Graphene". United States. doi:10.1155/2018/8349626.
@article{osti_1466086,
title = {PMMA-Assisted Plasma Patterning of Graphene},
author = {Bobadilla, Alfredo D. and Ocola, Leonidas E. and Sumant, Anirudha V. and Kaminski, Michael and Seminario, Jorge M.},
abstractNote = {Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. In conclusion, we produce graphene ribbon patterns with ~50 nm width and integrate them into solid state and liquid gated transistor devices.},
doi = {10.1155/2018/8349626},
journal = {Journal of Nanotechnology},
number = ,
volume = 2018,
place = {United States},
year = {Thu Aug 23 00:00:00 EDT 2018},
month = {Thu Aug 23 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1155/2018/8349626

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Works referenced in this record:

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